FQB22P10TM

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FQB22P10TM

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MOSFET P-CH 100V 22A D2PAK

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Spezifikationen

Attribut Wert
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series QFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 22A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 125mOhm @ 11A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 50 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 1500 pF @ 25 V
Power Dissipation (Max) 3.75W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)

Übersicht

Description

The FQB22P10TM is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically used in electronic circuits for switching and amplifying electronic signals. This device is designed to handle a maximum drain-source voltage of 100V and a continuous drain current of up to 22A, making it suitable for a variety of power management applications. It features a low on-resistance which ensures efficient performance by minimizing energy loss and heat generation. The MOSFET comes in a TO-220 package, which is a common form factor allowing for easy mounting and integration into circuit designs. Its fast switching capabilities and robustness make it ideal for use in power supplies, motor controllers, and other high-performance electronic applications. Additionally, its thermal performance is enhanced by the design of the package, which can be attached to a heatsink to manage heat dissipation effectively. The FQB22P10TM offers reliability and efficiency, making it a preferred choice for engineers looking for high-power, efficient transistors.

Equivalent

The FQB22P10TM is a P-channel MOSFET. Equivalent products that offer similar specifications include:
1. IRF9540N from Infineon Technologies.
2. FQP27P06 from ON Semiconductor.
3. STP80PF55 from STMicroelectronics.
4. Si7433DP from Vishay.
5. AOI409 from Alpha & Omega Semiconductor.
Ensure to check the datasheets for specific parameters such as Vgs, Id, and Rds(on) to confirm compatibility with your application.

Features

The FQB22P10TM is a P-channel MOSFET developed by ON Semiconductor. Its key features include:
1. Voltage and Current Ratings: It typically handles a maximum drain-source voltage (V_DS) of -100V and a continuous drain current (I_D) up to -22A.
2. R_DS(on): The MOSFET offers a low on-state resistance, which minimizes power loss and improves efficiency. Typical R_DS(on) values are around 0.15 ohms at V_GS = -10V.
3. Package Type: It is commonly available in a TO-263 package, which provides efficient thermal performance.
4. Temperature Range: The device operates within a wide temperature range, generally from -55°C to +150°C, making it suitable for various applications.
5. Applications: It is commonly used in power management, DC-DC converters, and other switching applications due to its high efficiency and fast switching capabilities.
These features make the FQB22P10TM suitable for various electronic applications that require efficient and reliable power management.

Pinout

The FQB22P10TM is a P-channel MOSFET. It typically comes in a TO-263 package, also known as D2PAK, which generally has 3 pins along with a tab. The pin configuration is as follows:
1. Gate (G): This pin is used to control the conduction state of the MOSFET. A voltage applied to the gate controls the current flow between the source and drain.
2. Drain (D): This is the pin where the current flows out of the transistor. In a P-channel MOSFET, it is connected to the higher voltage.
3. Source (S): This pin is where the current enters the transistor. It is typically connected to ground or a lower voltage in P-channel devices.
The tab is usually connected internally to the drain pin and is used for heat dissipation. The FQB22P10TM is used in applications like switching regulators and power switching circuits, benefiting from its low on-resistance and capability to handle high currents.

Manufacturer

The FQB22P10TM is a P-channel MOSFET manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a company specializing in semiconductor manufacturing. It produces a wide range of semiconductor components, including power management devices, sensors, and custom products. The company serves various industries such as automotive, computing, consumer electronics, industrial, medical, and aerospace, providing solutions that help enhance energy efficiency, reliability, and performance across electronic systems.

Application

The FQB22P10TM is a P-channel MOSFET commonly used in various electronic applications. Its primary application areas include:
1. Power Management: Used in DC-DC converters and power supply circuits for efficient power regulation and distribution.
2. Load Switching: Acts as a switch in load management systems, enabling control over high-current loads.
3. Battery Protection: Offers overcurrent protection in battery-operated devices, enhancing battery life and safety.
4. Automotive Systems: Utilized in automotive electronics for controlling motors, lighting, and other accessories.
5. Consumer Electronics: Integrated into devices like laptops and smartphones for efficient power control.
The device's low on-resistance and high current capability make it suitable for these applications.

Package

The FQB22P10TM is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and it typically comes in a TO-220 package. The TO-220 package is a common type of power semiconductor packaging that provides a balance between size, thermal performance, and electrical isolation, making it suitable for various electronic applications.

Produkte, die mit FQB22P10TM zusammenhängen