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FQD16N25CTM
+StücklisteMOSFET N-CH 250V 16A DPAK
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HerstellerOnsemi
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Herstellerteil #FQD16N25CTM
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Datenblatt FQD16N25CTM DataSheet
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Paket TO-252-3
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Auf Lager4457
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 250 V |
| Current-ContinuousDrain(Id)@25°C | 16A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 270mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 53.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1080 pF @ 25 V |
| PowerDissipation(Max) | 160W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
Übersicht
Description
The FQD16N25CTM is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficiency in power management applications. Manufactured by ON Semiconductor, this MOSFET is designed to handle significant power levels, making it suitable for a variety of applications, including power supplies, motor drives, and DC-DC converters.
Key specifications of the FQD16N25CTM include a maximum drain-source voltage (V_DS) of 250V and a continuous drain current (I_D) of 16A. It features a low on-resistance (R_DS(on)), which minimizes power loss during operation, thereby enhancing energy efficiency. The component is housed in a TO-252 package, which offers good heat dissipation properties and is suitable for surface mounting, making it practical for compact electronic designs.
The FQD16N25CTM is valued for its robustness, fast switching capabilities, and thermal efficiency, making it a reliable choice for engineers looking to optimize power systems in various electronic applications.
Key specifications of the FQD16N25CTM include a maximum drain-source voltage (V_DS) of 250V and a continuous drain current (I_D) of 16A. It features a low on-resistance (R_DS(on)), which minimizes power loss during operation, thereby enhancing energy efficiency. The component is housed in a TO-252 package, which offers good heat dissipation properties and is suitable for surface mounting, making it practical for compact electronic designs.
The FQD16N25CTM is valued for its robustness, fast switching capabilities, and thermal efficiency, making it a reliable choice for engineers looking to optimize power systems in various electronic applications.
Equivalent
The FQD16N25CTM is a 250V N-channel MOSFET. Equivalent products from other manufacturers may include:
1. IRF540N from International Rectifier/Infineon
2. STP24NF10 from STMicroelectronics
3. NTD4906N from ON Semiconductor
4. FDPF5N50NZ from Fairchild/ON Semiconductor
Ensure the electrical parameters, packaging, and thermal characteristics align with your requirements before substituting.
1. IRF540N from International Rectifier/Infineon
2. STP24NF10 from STMicroelectronics
3. NTD4906N from ON Semiconductor
4. FDPF5N50NZ from Fairchild/ON Semiconductor
Ensure the electrical parameters, packaging, and thermal characteristics align with your requirements before substituting.
Features
The FQD16N25CTM is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficient performance in high-speed switching applications. Here are its key features:
1. N-Channel MOSFET: It is an N-channel MOSFET, which means it conducts when a positive voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: It typically features a drain-source voltage (V_DS) of 250V and a continuous drain current (I_D) of 16A.
3. Low On-Resistance: The device offers low on-state resistance, which reduces power loss and enhances efficiency.
4. Fast Switching Speed: It is designed for fast switching, which makes it suitable for high-frequency applications.
5. TO-263 Package: This MOSFET is usually housed in a TO-263 package, providing good thermal performance and ease of mounting.
6. Robustness: It includes features like avalanche ruggedness, which enhances its durability under high-energy conditions.
These features make the FQD16N25CTM suitable for use in various applications, including power management, motor control, and other high-efficiency electronic circuits.
1. N-Channel MOSFET: It is an N-channel MOSFET, which means it conducts when a positive voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: It typically features a drain-source voltage (V_DS) of 250V and a continuous drain current (I_D) of 16A.
3. Low On-Resistance: The device offers low on-state resistance, which reduces power loss and enhances efficiency.
4. Fast Switching Speed: It is designed for fast switching, which makes it suitable for high-frequency applications.
5. TO-263 Package: This MOSFET is usually housed in a TO-263 package, providing good thermal performance and ease of mounting.
6. Robustness: It includes features like avalanche ruggedness, which enhances its durability under high-energy conditions.
These features make the FQD16N25CTM suitable for use in various applications, including power management, motor control, and other high-efficiency electronic circuits.
Pinout
The FQD16N25CTM is an N-channel MOSFET. It typically comes in a TO-252 package, which is also known as a DPAK. This package generally features 3 pins, plus a tab which is often used for heat dissipation and electrical connection.
The pin configuration is as follows:
1. Gate (G): This pin is responsible for controlling the MOSFET. By applying a voltage here, you can turn the device on or off.
2. Drain (D): The drain is the terminal through which the main current flows from the external circuit when the MOSFET is on.
3. Source (S): This is the terminal where the current enters the MOSFET.
The tab, which is often not counted among the standard pins, is typically connected to the drain and serves as both a heat sink and an additional electrical connector.
The pin configuration is as follows:
1. Gate (G): This pin is responsible for controlling the MOSFET. By applying a voltage here, you can turn the device on or off.
2. Drain (D): The drain is the terminal through which the main current flows from the external circuit when the MOSFET is on.
3. Source (S): This is the terminal where the current enters the MOSFET.
The tab, which is often not counted among the standard pins, is typically connected to the drain and serves as both a heat sink and an additional electrical connector.
Manufacturer
The FQD16N25CTM is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a global company specializing in intelligent technology solutions, particularly in the fields of power and signal management, logic, discrete, and custom devices. The company provides products and solutions for a wide range of industries, including automotive, communications, computing, consumer electronics, industrial, medical, and aerospace and defense. Onsemi focuses on creating energy-efficient innovations to enable a sustainable future, enhancing the performance and efficiency of electronic products and systems.
Application
The FQD16N25CTM is an N-channel MOSFET typically used in applications requiring high efficiency and fast switching. Key application areas include:
1. Power Supply Units: Used in switched-mode power supplies for efficient power conversion.
2. Motor Drives: Suitable for driving motors in various consumer electronics and industrial equipment.
3. DC-DC Converters: Utilized in step-up or step-down converters for efficient voltage regulation.
4. Inverters: Employed in inverter circuits for renewable energy systems like solar panel installations.
5. Load Switches: Acts as a switch for controlling power to different loads in electronic devices.
These applications leverage its low on-resistance and fast switching characteristics for improved performance.
1. Power Supply Units: Used in switched-mode power supplies for efficient power conversion.
2. Motor Drives: Suitable for driving motors in various consumer electronics and industrial equipment.
3. DC-DC Converters: Utilized in step-up or step-down converters for efficient voltage regulation.
4. Inverters: Employed in inverter circuits for renewable energy systems like solar panel installations.
5. Load Switches: Acts as a switch for controlling power to different loads in electronic devices.
These applications leverage its low on-resistance and fast switching characteristics for improved performance.
Package
The FQD16N25CTM is a type of MOSFET transistor, and it typically comes in a TO-252 package, also known as a DPAK. This package type is designed for surface mounting and is commonly used for power semiconductor devices.
