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FQD1N80TM
+StücklisteMOSFET N-CH 800V 1A DPAK
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HerstellerOnsemi
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Herstellerteil #FQD1N80TM
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Spezifikationen
| Attribut | Wert |
| Series | QFET® |
| Part Status | Active |
| Base Product Number | FQD1N80 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 20Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
