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FQD7N30TM
+StücklisteMOSFET N-CH 300V 5.5A DPAK
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HerstellerOnsemi
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Herstellerteil #FQD7N30TM
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Auf Lager6593
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Spezifikationen
| Attribut | Wert |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 300 V |
| Current - Continuous Drain(Id) @ 25°C | 5.5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 700mOhm @ 2.75A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 17 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 610 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Übersicht
Description
FQD7N30TM is a high‑voltage N‑channel enhancement MOSFET used as a switching element in power electronics. In the FQD7N30 family, the “30” indicates a drain‑to‑source rating around 300 V, making the device suitable for switch‑mode power supplies, inverters, and motor drives that require robust voltage handling.
Typical strengths include:
- Solid high‑voltage performance for rugged switching
- Reasonable on‑state resistance for efficient conduction
- Fast switching characteristics for PWM applications
- Good avalanche/ruggedness for protection against transients
- Standard power‑MOSFET packaging options and thermal capability (heat sinking)
Exact electrical specs—such as Vds, Id max, Rds(on), gate charge, threshold, and packaging—vary by variant and lot. For design use, consult the manufacturer’s datasheet and the latest reliability/thermal data to ensure the device meets your operating voltage, current, switching frequency, and temperature requirements.
Typical strengths include:
- Solid high‑voltage performance for rugged switching
- Reasonable on‑state resistance for efficient conduction
- Fast switching characteristics for PWM applications
- Good avalanche/ruggedness for protection against transients
- Standard power‑MOSFET packaging options and thermal capability (heat sinking)
Exact electrical specs—such as Vds, Id max, Rds(on), gate charge, threshold, and packaging—vary by variant and lot. For design use, consult the manufacturer’s datasheet and the latest reliability/thermal data to ensure the device meets your operating voltage, current, switching frequency, and temperature requirements.
Features
FQD7N30TM features (typical for this N-channel power MOSFET):
- N-channel enhancement-mode power MOSFET
- Vds: 30 V; Id: ~7 A class (device rating depends on package/heatsinking)
- Low on-resistance for efficient conduction
- Fast switching characteristics with low gate charge
- Integrated intrinsic body diode; suitable for inductive loads
- Avalanche energy rating for transient protection
- RoHS-compliant; suitable for DC-DC converters, motor drives, power supplies
- Available in surface-mount packages (e.g., DPAK/TO-252) with good thermal performance
Note: exact Rds(on), Vgs(th), and packaging vary by revision. Please consult the latest datasheet for precise figures.
- N-channel enhancement-mode power MOSFET
- Vds: 30 V; Id: ~7 A class (device rating depends on package/heatsinking)
- Low on-resistance for efficient conduction
- Fast switching characteristics with low gate charge
- Integrated intrinsic body diode; suitable for inductive loads
- Avalanche energy rating for transient protection
- RoHS-compliant; suitable for DC-DC converters, motor drives, power supplies
- Available in surface-mount packages (e.g., DPAK/TO-252) with good thermal performance
Note: exact Rds(on), Vgs(th), and packaging vary by revision. Please consult the latest datasheet for precise figures.
Pinout
- Pin count: 3 leads (plus a drain tab).
- Function/pinout: N-channel enhancement-mode MOSFET. Typical pinout in common packages: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source; the metal tab is also Drain.
- Function/pinout: N-channel enhancement-mode MOSFET. Typical pinout in common packages: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source; the metal tab is also Drain.
Manufacturer
- Manufacturer: Fairchild Semiconductor (now part of ON Semiconductor).
- Company type: A global semiconductor company that designs and manufactures discrete and integrated devices, including power MOSFETs and other power/analog components.
- Company type: A global semiconductor company that designs and manufactures discrete and integrated devices, including power MOSFETs and other power/analog components.
Application
FQD7N30TM is a 30 V N-channel MOSFET. Common application areas:
- Switching power supplies: DC-DC buck/boost regulators and point-of-load converters (including synchronous rectification).
- Motor control and PWM power stages (DC motors, stepper, small motors).
- Load switching and power-management circuits: on/off switches, hot-swap, reverse-polarity protection.
- Automotive and industrial power electronics requiring a 30 V rating.
- General-purpose high-side/low-side switching in compact, surface-mount designs.
- Switching power supplies: DC-DC buck/boost regulators and point-of-load converters (including synchronous rectification).
- Motor control and PWM power stages (DC motors, stepper, small motors).
- Load switching and power-management circuits: on/off switches, hot-swap, reverse-polarity protection.
- Automotive and industrial power electronics requiring a 30 V rating.
- General-purpose high-side/low-side switching in compact, surface-mount designs.
Package
DPAK package (TO-252) — surface-mount MOSFET package.
