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FQD8P10TM
+StücklisteMOSFET P-CH 100V 6.6A DPAK
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HerstellerOnsemi
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Herstellerteil #FQD8P10TM
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Datenblatt FQD8P10TM DataSheet
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Spezifikationen
| Attribut | Wert |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 6.6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 530mOhm @ 3.3A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 470 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Übersicht
Description
Equivalent
1. IRF9540N
2. FQP27P06
3. STP55NF06
4. FDP6035
When selecting an equivalent, ensure it matches the original in terms of voltage, current, on-resistance, and package type. Always check the datasheets to confirm compatibility with your specific application.
Features
1. Voltage and Current Ratings: It usually supports a drain-source voltage (V_DS) of around -100V and a continuous drain current (I_D) of approximately -8A.
2. Low On-State Resistance: The device offers low R_DS(on), which ensures minimal power loss and efficient operation.
3. Enhanced Switching Performance: Designed for fast switching, it aids in improving the efficiency of power circuits.
4. Thermal Performance: It often comes in a package designed to effectively dissipate heat, thereby maintaining performance stability over a wide temperature range.
5. Applications: Commonly used in DC-DC converters, load switch applications, and other power management circuits.
6. Package Type: Typically provided in a TO-252 (DPAK) package, which is suitable for surface mount technology.
These features make the FQD8P10TM a reliable choice for designers looking for efficient and robust power MOSFETs for their electronic circuits.
Pinout
1. Gate (G): This pin controls the MOSFET's conduction state. Applying a voltage to the gate determines whether the MOSFET is on or off.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is on. It is connected to the load in a circuit.
3. Source (S): The source is the terminal from which carriers exit the MOSFET. It is typically connected to the ground or a common voltage reference in a circuit.
The primary function of the FQD8P10TM is to act as a switch or amplifier in electronic circuits, managing the flow of electrical power based on the gate voltage. It's used in applications requiring efficient power management and control. Always refer to the datasheet for specific details and terminal configurations.