FQP12N60C

Abbildungen dienen nur als Referenz

FQP12N60C

+Stückliste

POWER FIELD-EFFECT TRANSISTOR, 1

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 25 V
Power Dissipation (Max) 225W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

Übersicht

Description

The FQP12N60C is a N-channel MOSFET designed for high-speed switching applications. With a maximum continuous drain current of 12A and a maximum drain-source voltage of 600V, it is suitable for use in power supplies, motor control, and other high-voltage applications. This MOSFET features low on-resistance (R_DS(on)) of approximately 0.18 ohms, which helps reduce power losses during operation.
The device is housed in a TO-220 package, facilitating efficient heat dissipation and easy mounting on heat sinks. It is also characterized by fast switching speeds, making it ideal for pulse width modulation (PWM) and other dynamic applications.
The FQP12N60C is often used in conjunction with a gate driver for optimal performance, ensuring efficient control and minimal switching losses. Overall, its robust specifications and reliability make it a popular choice among engineers for both industrial and consumer electronic applications.

Equivalent

The FQP12N60C is an N-channel MOSFET with a voltage rating of 600V and a current rating of 12A. Equivalent products include IRF240, STP12NM60, and MTP12N60E. Always check specific datasheets for exact specifications and suitability for your application.

Features

The FQP12N60C is an N-channel MOSFET designed for high voltage and high current applications. Key features include:
1. Voltage Rating: It can handle up to 600V, making it suitable for high-voltage circuits.
2. Current Rating: It has a continuous drain current rating of 12A, allowing for significant power management.
3. RDS(on): Low on-resistance of approximately 0.19Ω at VGS = 10V, which helps minimize power losses during operation.
4. Gate Threshold Voltage: VGS(th) ranges from 2V to 4V, enabling compatibility with low-voltage drive circuits.
5. Fast Switching: Offers excellent switching speeds, making it ideal for applications like switch-mode power supplies and inverters.
6. Package: Available in a TO-220 package, which provides good thermal performance and ease of heat dissipation.
These features make the FQP12N60C suitable for various applications, including motor control, power supplies, and electronic switching.

Pinout

The FQP12N60C is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching; applying a voltage here turns the device on.
2. Drain (D): The terminal through which the load current flows when the MOSFET is on.
3. Source (S): Connected to ground or the negative side of the circuit; it is the terminal that allows current to flow out of the MOSFET when activated.
The FQP12N60C is designed for high-voltage applications, with a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 12A. It is commonly used in power supplies, motor drivers, and other applications requiring efficient switching.

Manufacturer

The FQP12N60C is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for producing a wide range of semiconductor products, including power MOSFETs, integrated circuits, and other electronic components. The company specialized in providing solutions for various applications such as automotive, industrial, computing, and consumer electronics.
Fairchild was recognized for its innovation in the semiconductor industry, particularly in power management and analog devices. The acquisition by ON Semiconductor in 2016 expanded ON's portfolio and strengthened its position in the global semiconductor market. ON Semiconductor focuses on providing energy-efficient solutions, catering to a diverse array of sectors including automotive, communication, computing, industrial, and consumer electronics.
Overall, the FQP12N60C is a power MOSFET that is widely used in applications that require high-voltage switching, and it reflects the legacy of Fairchild Semiconductor's commitment to high-performance semiconductor technologies.

Application

The FQP12N60C is an N-channel MOSFET primarily used in power electronics applications. Its key areas include:
1. Switching Power Supplies: For efficient voltage conversion and regulation.
2. Motor Drivers: Controlling DC and stepper motors in industrial and robotics applications.
3. Lighting Control: Used in LED drivers and dimmer circuits.
4. Inverters: For solar panel systems and UPS (Uninterruptible Power Supplies).
5. Class D Audio Amplifiers: Amplifying audio signals with high efficiency.
6. Heating Elements: Used in applications requiring temperature control.
Its high voltage and current ratings make it suitable for various high-power applications.

Package

The FQP12N60C is typically packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation, allowing for efficient thermal management in power applications.

Produkte, die mit FQP12N60C zusammenhängen