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FQT3P20TF
+StücklisteMOSFET P-CH 200V 670MA SOT223-4
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HerstellerOnsemi
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Herstellerteil #FQT3P20TF
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Paket SOT-223-4
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Auf Lager7023
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 670mA (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.7Ohm @ 335mA, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 250 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223-4 |
Übersicht
Description
Equivalent
1. IRF9530
2. FQP27P06
3. 2N5460
4. BSS84
5. ZVP4424A
These components may vary in specific parameters, so it's crucial to check datasheets to ensure compatibility with your application.
Features
1. Type: P-Channel MOSFET.
2. Voltage Rating: Can handle a drain-source voltage (V_DS) of up to 20V.
3. Current Rating: Capable of delivering continuous drain current (I_D) up to -3.6A.
4. R_DS(on): Exhibits a low on-resistance of approximately 70 mΩ, enhancing efficiency.
5. Gate Threshold Voltage: Typically around -1V to -3V for turn-on.
6. Package: Comes in a TO-220 package, facilitating ease of mounting and thermal management.
7. Temperature Range: Operates effectively over a broad temperature range, typically -55°C to 150°C.
8. Applications: Suited for switching applications, load switching, and power management in various electronic devices.
These features make the FQT3P20TF ideal for applications requiring efficient power control and low power loss.