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G10N10A
+StücklisteN100V,RD(MAX)130mOHM@10V,TO-252
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HerstellerGoford Halbleiter
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Herstellerteil #G10N10A
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Auf Lager4149
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Spezifikationen
| Attribut | Wert |
| Supplier | Goford Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 10A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 130mOhm @ 2A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 90 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 690 pF @ 25 V |
| Power Dissipation (Max) | 28W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 (D-Pak) |
