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G3R20MT12N
+StücklisteSIC MOSFET N-CH 105A SOT227
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HerstellerGeneSiC Halbleiter
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Herstellerteil #G3R20MT12N
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Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Tube |
| Series | G3R™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 105A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 15V |
| Rds On(Max) @ Id Vgs | 24mOhm @ 60A, 15V |
| Vgs(th)(Max) @ Id | 2.69V @ 15mA |
| Gate Charge(Qg)(Max) @ Vgs | 219 nC @ 15 V |
| Vgs(Max) | +20V, -10V |
| Input Capacitance(Ciss)(Max) @ Vds | 5873 pF @ 800 V |
| Power Dissipation (Max) | 365W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227 |
