Abbildungen dienen nur als Referenz
G3S06504A
+StücklisteSIC SCHOTTKY DIODE 650V 4A 2-PIN
-
HerstellerGlobal Power Technology – GPT
-
Herstellerteil #G3S06504A
-
Paket TO-220-2
-
Auf Lager2565
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Global Power Technology-GPT |
| Package / Case | Cut Tape (CT),Tape & Box (TB) |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io) | 11.5A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr F | 181pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AC |