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G3S12004B
+StücklisteSIC SCHOTTKY DIODE 1200V 4A 3-PI
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HerstellerGlobal Power Technology – GPT
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Herstellerteil #G3S12004B
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Paket TO-247-3
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Auf Lager8675
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Global Power Technology-GPT |
| Package | Cut Tape (CT),Tape & Box (TB) |
| ProductStatus | Active |
| DiodeConfiguration | 1 Pair Common Cathode |
| DiodeType | Silicon Carbide Schottky |
| Voltage-DCReverse(Vr)(Max) | 1200 V |
| Current-AverageRectified(Io)(perDiode) | 8.5A (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 2 A |
| Speed | No Recovery Time > 500mA (Io) |
| ReverseRecoveryTime(trr) | 0 ns |
| Current-ReverseLeakage@Vr | 50 µA @ 1200 V |
| OperatingTemperature-Junction | -55°C ~ 175°C |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
