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G4S06515QT
+StücklisteSIC SCHOTTKY DIODE 650V 15A DFN8
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HerstellerGlobal Power Technology Co., Ltd.
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Herstellerteil #G4S06515QT
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Datenblatt G4S06515QT DataSheet
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Paket TSFN-4
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Auf Lager3949
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Global Power Technology Co. Ltd |
| Package / Case | Bulk |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io) | 53A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 15 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr F | 645pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-DFN (8x8) |
