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G4S06530BT
+StücklisteSIC SCHOTTKY DIODE 650V 30A 3-PI
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HerstellerGlobal Power Technology Co., Ltd.
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Herstellerteil #G4S06530BT
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Paket TO-247-3
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Auf Lager4315
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Global Power Technology Co. Ltd |
| Package / Case | Bulk |
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io)(per Diode) | 39A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 15 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
