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G5S06510QT
+StücklisteSIC SCHOTTKY DIODE 650V 10A DFN8
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HerstellerGlobal Power Technology – GPT
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Herstellerteil #G5S06510QT
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Datenblatt G5S06510QT DataSheet
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Paket 4-PowerTSFN
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Auf Lager7408
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Global Power Technology-GPT |
| Package | Cut Tape (CT),Tape & Box (TB) |
| ProductStatus | Active |
| DiodeType | Silicon Carbide Schottky |
| Voltage-DCReverse(Vr)(Max) | 650 V |
| Current-AverageRectified(Io) | 53A (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.5 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| ReverseRecoveryTime(trr) | 0 ns |
| Current-ReverseLeakage@Vr | 50 µA @ 650 V |
| Capacitance@VrF | 645pF @ 0V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | 4-PowerTSFN |
| SupplierDevicePackage | 4-DFN (8x8) |
