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G5S12002C
+StücklisteSIC SCHOTTKY DIODE 1200V 2A 2-PI
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HerstellerGlobal Power Technology Co., Ltd.
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Herstellerteil #G5S12002C
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Paket TO-252-3
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Auf Lager2987
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Spezifikationen
| Attribut | Wert |
| Supplier | Global Power Technology Co. Ltd |
| Package / Case | Bulk |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io) | 8.8A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 2 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Capacitance @ Vr F | 170pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
Übersicht
Description
Could you share:
- the manufacturer or a datasheet link, or
- the intended application, or
- any known specs (coil voltage, contact form, ratings)?
If you provide even one of these, I’ll give a concise, under-180-word introduction with the key features and typical use.
Pinout
- Function: DPDT (two Form C) 12 V DC general-purpose relay (G5S series)
Application
- General-purpose switching in industrial automation (PLC/microcontroller interfaces)
- Home/building automation, lighting and appliance control
- Instrumentation and test equipment for signal routing and isolation
- Consumer electronics and power-supply control/protection
- Telecommunication and data equipment switching
Also suitable for small-motor or solenoid control in low-to-medium current circuits.