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G5S12008H
+StücklisteSIC SCHOTTKY DIODE 1200V 8A 2-PI
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HerstellerGlobal Power Technology Co., Ltd.
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Herstellerteil #G5S12008H
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Datenblatt G5S12008H DataSheet
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Paket TO-220-2 Full Pack
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Auf Lager6976
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Global Power Technology Co. Ltd |
| Package | Bulk |
| ProductStatus | Active |
| DiodeType | Silicon Carbide Schottky |
| Voltage-DCReverse(Vr)(Max) | 1200 V |
| Current-AverageRectified(Io) | 16A (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| ReverseRecoveryTime(trr) | 0 ns |
| Current-ReverseLeakage@Vr | 50 µA @ 1200 V |
| Capacitance@VrF | 550pF @ 0V, 1MHz |
| MountingType | Through Hole |
| Package/Case | TO-220-2 Full Pack |
| SupplierDevicePackage | TO-220F |
