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G5S6506Z
+StücklisteSIC SCHOTTKY DIODE 650V 6A DFN5
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HerstellerGlobal Power Technology Co., Ltd.
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Herstellerteil #G5S6506Z
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Datenblatt G5S6506Z DataSheet
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Paket 8-PowerTDFN
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Auf Lager9328
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Global Power Technology Co. Ltd |
| Package | Bulk |
| ProductStatus | Active |
| DiodeType | Silicon Carbide Schottky |
| Voltage-DCReverse(Vr)(Max) | 650 V |
| Current-AverageRectified(Io) | 30.5A (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.5 V @ 6 A |
| Speed | No Recovery Time > 500mA (Io) |
| ReverseRecoveryTime(trr) | 0 ns |
| Current-ReverseLeakage@Vr | 50 µA @ 650 V |
| Capacitance@VrF | 395pF @ 0V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | 8-PowerTDFN |
| SupplierDevicePackage | 8-DFN (4.9x5.75) |
