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GA03JT12-247
+StücklisteTRANS SJT 1200V 3A TO247AB
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HerstellerGeneSiC Halbleiter
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Herstellerteil #GA03JT12-247
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Datenblatt GA03JT12-247 DataSheet
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Auf Lager8267
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Tube |
| Part Status | Obsolete |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 3A (Tc) (95°C) |
| Rds On(Max) @ Id Vgs | 460mOhm @ 3A |
| Power Dissipation (Max) | 15W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AB |
