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GD02MPS12E
+Stückliste1200V 2A TO-252-2 SIC SCHOTTKY M
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HerstellerGeneSiC Halbleiter
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Herstellerteil #GD02MPS12E
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Datenblatt GD02MPS12E DataSheet
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Paket TO-252-3
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Auf Lager4020
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Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | SiC Schottky MPS™ |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io) | 8A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 1200 V |
| Capacitance @ Vr F | 73pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252-2 |
