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GD25B256EYIGR
+StücklisteIC FLASH 256MBIT SPI/QUAD 8WSON
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HerstellerGigaDevice Semiconductor (HK) Limited
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Herstellerteil #GD25B256EYIGR
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Datenblatt GD25B256EYIGR DataSheet
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Auf Lager15546
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Spezifikationen
| Attribut | Wert |
| Series | GD25B |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Memory Size | 256Mbit |
| Memory Organization | 32M x 8 |
| Memory Interface | SPI - Quad I/O |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Base Product Number | GD25B256 |
| Technology | FLASH - NOR (SLC) |
| Supplier Device Package | 8-WSON (6x8) |
Übersicht
Description
Key features of the GD25B256EYIGR include fast read/write speeds, low power consumption, and a wide operating temperature range, making it suitable for industrial and consumer applications. It supports standard, dual, and quad SPI interfaces, enhancing its versatility in different systems. The chip is packaged in a compact form, typically a WSON (Wafer Level Small Outline No-lead) package, which is suitable for space-constrained devices.
Common applications for the GD25B256EYIGR include code shadowing for microcontrollers, storage for firmware, and data logging in embedded systems. Its robust design ensures data integrity and long-term storage reliability, which are critical for modern electronic products.
Equivalent
Features
1. Capacity: 256 Megabits (32 Megabytes).
2. Interface: Supports standard SPI (Serial Peripheral Interface) and Dual-I/O SPI protocols.
3. Operating Voltage: Wide voltage range from 2.7V to 3.6V.
4. Performance: Fast read speeds up to 104 MHz for efficient data access.
5. Sector Architecture: Organized in sectors for flexible erase and write operations.
6. Data Retention: Provides data retention for up to 20 years, ensuring long-term reliability.
7. Endurance: High endurance with up to 100,000 program/erase cycles per sector.
8. Package: Typically available in an 8-pin SOP (Small Outline Package) or similar compact package.
9. Low Power Consumption: Designed for low power usage, making it suitable for battery-powered applications.
10. Security: Features security options such as block protection and hardware-based write protection.
This flash memory is ideal for use in consumer electronics, IoT devices, and other applications requiring non-volatile storage.
Pinout
1. CS# (Chip Select): Activates the chip for communication.
2. DO/IO1 (Data Out/IO1): Outputs data or serves as an input/output pin in dual/quad modes.
3. WP# (Write Protect): Protects certain parts of the memory from being written to.
4. GND (Ground): Ground reference.
5. DI/IO0 (Data In/IO0): Inputs data or serves as an input/output pin in dual/quad modes.
6. CLK (Clock): Provides the clock signal for data transfer.
7. RESET#/HOLD#: Resets the device or holds communication in some configurations.
8. VCC (Supply Voltage): Powers the chip with a supply voltage.
These pins facilitate SPI (Serial Peripheral Interface) communication, allowing for efficient data storage and retrieval. Note that specific pin functions may vary slightly depending on the package and configuration, so consulting the datasheet for precise details is recommended.
Manufacturer
Application
1. Consumer Electronics: Used in devices like digital cameras and smart TVs for firmware storage.
2. IoT Devices: Provides storage for firmware and sensor data in smart home devices and industrial IoT solutions.
3. Automotive Systems: Utilized in infotainment systems and advanced driver-assistance systems (ADAS) for data logging and firmware.
4. Networking Equipment: Stores configuration data and boot firmware for routers and switches.
5. Medical Devices: Used for storing operational software and patient data.
Its features, such as fast read/write speeds and high reliability, make it suitable for these applications.