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GD25LB256EYJGR
+StücklisteIC FLASH 256MBIT SPI/QUAD
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HerstellerGigaDevice Semiconductor (HK) Limited
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Herstellerteil #GD25LB256EYJGR
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Auf Lager11948
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Spezifikationen
| Attribut | Wert |
| Series | GD25LB |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Memory Size | 256Mbit |
| Memory Organization | 32M x 8 |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Clock Frequency | 166 MHz |
| Voltage - Supply | 1.65V ~ 2V |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Base Product Number | GD25LB256 |
| Technology | FLASH - NOR (SLC) |
| Write Cycle Time - Word, Page | 140µs, 2ms |
| Supplier Device Package | 8-WSON (6x8) |
| Access Time | 5 ns |
Übersicht
Description
The GD25LB256EYJGR utilizes a Serial Peripheral Interface (SPI) for communication, which simplifies integration into systems by reducing the number of necessary pins and connections. This chip supports several advanced features, including dual and quad I/O modes for faster data transfer, a fast read mode up to 133 MHz, and a page program feature that enhances writing efficiency.
This memory chip is typically used in consumer electronics, automotive applications, and industrial devices where compact and robust data storage solutions are essential. Its compact WSON package makes it ideal for space-constrained applications.
Equivalent
1. Winbond W25Q256JV
2. Micron MT25QL256ABA
3. Macronix MX25U25635F
4. ISSI IS25LP256D
These components provide similar storage capacities and functionalities, such as supporting SPI (Serial Peripheral Interface) protocols and comparable performance characteristics. Always verify pin compatibility and electrical specifications before substituting components in a design.
Features
1. Capacity: It offers 256 Megabits (32 Megabytes) of memory.
2. Interface: Utilizes a Quad SPI (Serial Peripheral Interface) for high-speed data transfers.
3. Voltage Range: Operates at a wide voltage range, typically around 1.65V to 3.6V.
4. Read Speeds: Supports fast read operations, enhancing performance in demanding applications.
5. Erase/Write Functionality: Features sector, block, and chip erase capabilities, allowing for flexible data management.
6. Low Power Consumption: Designed to be energy-efficient, suitable for battery-powered devices.
7. Endurance: High endurance with a significant number of program/erase cycles.
8. Temperature Range: Qualified for operation over an extended temperature range, making it suitable for various environments.
9. Package Options: Available in compact packaging for space-constrained designs, such as WSON.
These features make the GD25LB256EYJGR suitable for applications like IoT devices, consumer electronics, and industrial automation systems.
Pinout
1. CS# (Chip Select): Activates the device when pulled low.
2. SO/IO1 (Serial Data Output): Outputs data during read operations; also serves as I/O pin 1.
3. WP#/IO2 (Write Protect): Can be used to write-protect the device; also serves as I/O pin 2.
4. VSS (Ground): Connects to system ground.
5. SI/IO0 (Serial Data Input): Inputs data during write operations; also serves as I/O pin 0.
6. SCK (Serial Clock): Provides the clock signal for data transfer.
7. HOLD#/IO3 (Hold): Pauses communication without deselecting the device; also serves as I/O pin 3.
8. VCC (Supply Voltage): Powers the device.
This memory chip is used for data storage and is compatible with various communication protocols such as SPI (Serial Peripheral Interface).