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GD25LQ80EEIGR
+StücklisteIC FLASH 8MBIT SPI/QUAD 8USON
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HerstellerGigaDevice Semiconductor (HK) Limited
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Herstellerteil #GD25LQ80EEIGR
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Auf Lager16096
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Spezifikationen
| Attribut | Wert |
| Series | GD25LQ |
| Part Status | Active |
| Base Product Number | GD25LQ80 |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR (SLC) |
| Memory Size | 8Mbit |
| Memory Organization | 1M x 8 |
| Memory Interface | SPI - Quad I/O, QPI |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Voltage - Supply | 1.65V ~ 2V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-XFDFN Exposed Pad |
| Supplier Device Package | 8-USON (3x2) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
| Access Time | 6 ns |
Übersicht
Description
- Capacity: 8 Mb (1 MB), organized as 1,048,576 × 8
- Operations: Page program (256 bytes); erase options: 4 KB sectors, 32 KB/64 KB blocks, chip erase; includes write protection/status registers
- Power/Temp: 2.7–3.6 V supply; industrial temperature range (-40°C to +85°C); RoHS-compliant 8‑pin package (suffix -IGR)
- Use cases: firmware storage, boot code, data logging in embedded systems
- Speeds: SPI clock in tens of MHz; higher throughput in Dual/Quad I/O modes
For exact electrical specs, timing, and package details, consult the GD25LQ80E datasheet.
Equivalent
- Winbond W25Q80BV / W25Q80DV
- Macronix MX25LQ80B
- ISSI IS25LP080D
- Fudan Micro FM25Q80A
(These are cross-reference parts from major vendors with similar 8 Mbit SPI flash specs.)
Features
- Capacity: 8 Mbit (1 MB) serial flash memory
- Interface: SPI-compatible with standard, dual, and quad I/O modes
- Voltage: 2.7–3.6 V (3.3 V logic) with low-power operation
- Addressing: 24-bit addressing for the memory map
- Page and blocks: 256-byte page size; 4 KB sectors; larger block erase options (e.g., 64 KB)
- Read/Write: fast read support; page program; erase operations
- Speed: high-speed operation (fast read; Quad SPI with higher throughput)
- Power modes: Deep power-down and wake-up
- Protection: hardware write-protect and status register protections
- Endurance/retention: typical erase/program cycles around 100k; long data retention
- Temperature: industrial temperature range (typical -40°C to +125°C)
- Packaging: RoHS-compliant package suitable for SPI flash usage
Note: exact speeds, block sizes, and endurance can vary by revision; verify in the datasheet for your lot.
Pinout
- Function: GD25LQ80EEIGR is an 8 Mbit serial flash memory device with SPI-compatible interface (read/write/erase) used for non-volatile storage of firmware and data.
Manufacturer
- What kind of company: A fabless semiconductor company based in Beijing, China, specializing in flash memory products (SPI/NOR and NAND flash) and related microcontrollers, designing memory ICs and marketing them to consumer electronics, embedded, automotive, and industrial markets. Manufacturing is done through external foundries.
Application
- Code storage for MCUs/SoCs and bootloaders
- Firmware updates and recovery in consumer, IoT, and industrial devices
- Non-volatile storage for configuration, calibration data, and logs
- Data logging and parameter storage in embedded systems
- Automotive and industrial control electronics requiring reliable external flash
It provides a low-pin count, simple SPI interface suitable for compact embedded designs.