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GD25Q16ESIGR
+Stückliste16MBIT NOR FLASH /3.3V /SOP8 208
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HerstellerGigaDevice Semiconductor (HK) Limited
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Herstellerteil #GD25Q16ESIGR
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Auf Lager1242
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR |
| MemorySize | 16Mb (2M x 8) |
| MemoryInterface | SPI - Quad I/O |
| ClockFrequency | 133 MHz |
| WriteCycleTime-WordPage | 70µs, 2ms |
| AccessTime | 7 ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.209, 5.30mm Width) |
Übersicht
Description
This memory chip offers a wide operating temperature range, making it suitable for various environments. It includes features like uniform 4KB sector erase, block erase, and chip erase capabilities, allowing for flexible data management. The GD25Q16ESIGR also supports fast read and page program operations, ensuring efficient performance.
The device is housed in a compact SOIC-8 package, making it easy to integrate into a wide variety of circuit designs. With its balance of performance, capacity, and cost-effectiveness, the GD25Q16ESIGR is a versatile choice for developers needing reliable flash storage solutions.
Equivalent
1. Winbond W25Q16JV - Also a 16Mb serial Flash memory chip.
2. Micron M25P16 - Similar memory capacity and function.
3. Macronix MX25L1606E - Features similar memory capacity and performance.
4. Adesto AT25SF161 - A comparable 16Mb serial Flash chip.
These alternatives offer similar storage capacity and interface, suitable for applications requiring serial NOR Flash memory.
Features
1. Interface: Utilizes a Serial Peripheral Interface (SPI) for communication, supporting standard, dual, and quad SPI protocols, enhancing flexibility and speed.
2. Operating Voltage: Operates at a wide voltage range from 2.3V to 3.6V, making it suitable for various applications.
3. Speed: Supports a high-speed clock frequency of up to 104 MHz, which allows for fast read operations.
4. Erase/Write: Features sector, block, and chip erase capabilities, and supports page-programming operations, enabling efficient memory management.
5. Protection: Includes various hardware and software data protection mechanisms, such as write protection and lock/unlock functions for specific regions of memory.
6. Endurance and Retention: Offers high endurance with up to 100,000 program/erase cycles per sector and data retention of up to 20 years, ensuring long-term reliability.
7. Package: Available in standard industry packages like SOP8, which facilitates integration into existing designs.
These features make the GD25Q16ESIGR suitable for a wide range of applications, including embedded systems, consumer electronics, and industrial devices.
Pinout
1. CS# (Chip Select): Activates the device when low and enables communication.
2. DO (Data Out)/IO1: Serves as the data output pin in standard SPI mode and functions as an I/O pin in dual/quad modes.
3. WP# (Write Protect)/IO2: Used to write-protect the status register in standard SPI mode and as an I/O pin in quad mode.
4. GND: Ground reference for the power supply.
5. DI (Data In)/IO0: Data input pin in standard SPI mode and I/O in dual/quad modes.
6. CLK (Clock): Provides the clock signal to synchronize data transmission.
7. HOLD#/RESET (Hold/Reset)/IO3: Pauses device operation in standard SPI mode and acts as an I/O in quad mode.
8. VCC: Power supply voltage input.
These pins support the SPI (Serial Peripheral Interface) protocol, allowing communication and control of the memory device.