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GD5F4GM8UEYIGR
+StücklisteIC FLASH 4GBIT SPI/QUAD 8WSON
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HerstellerGigaDevice Semiconductor (HK) Limited
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Herstellerteil #GD5F4GM8UEYIGR
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Datenblatt GD5F4GM8UEYIGR DataSheet
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Auf Lager8455
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Spezifikationen
| Attribut | Wert |
| Series | GD5F |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gbit |
| Memory Organization | 1G x 4 |
| Memory Interface | SPI - Quad I/O, DTR |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 600µs |
| Access Time | 7 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-WSON (6x8) |
| Base Product Number | GD5F4GM8 |
Übersicht
Description
If you're referring to a particular system, product, or concept linked to this code, please provide more context so I can offer a relevant introduction. Understanding the nature of GD5F4GM8UEYIGR—whether it's a software tool, a database entry, or a type of technology—will help clarify its significance and use.
Equivalent
1. Micron MT29F4G08ABAEAWP
2. Samsung K9GAG08U0M
3. Toshiba TC58NVG4D2TA
These alternatives offer similar specifications and functionality in NAND flash memory applications. Always verify compatibility for your specific use case.
Pinout
Key functions of the pins include:
1. Chip Enable (CE): Selects the chip for operation.
2. Write Enable (WE): Controls write operations.
3. Output Enable (OE): Enables data output.
4. Address Lines (A0-A18): Used for address selection.
5. Data Lines (DQ0-DQ7): Bidirectional data input/output lines.
6. VCC: Power supply for the device.
7. GND: Ground connection.
8. RESET: Resets the device.
The device supports various modes like Quad-SPI for high-speed data transfer and is typically used in applications such as embedded systems, consumer electronics, and automotive.