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GD5F4GQ6UEYIG
+StücklisteNAND Flash 4Gbit 3.3V I/O -1/2/4 WSON 8*6
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HerstellerGigaDevice
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Herstellerteil #GD5F4GQ6UEYIG
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Datenblatt GD5F4GQ6UEYIG DataSheet
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Auf Lager26755
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Spezifikationen
| Attribut | Wert |
Übersicht
Equivalent
- Winbond: W25N04GVZEIG
- Micron: MT29F4G08ABAEAH4
- Spansion (Cypress): S34ML04G100TFI000
- Samsung: K9F4G08U0D
These are 4Gb (512MB) SLC NAND flash chips with similar interfaces (e.g., SPI or parallel). Verify pinout and voltage compatibility before substitution.
Features
- High bandwidth (e.g., 32 GB/s per pin for GDDR6).
- Low power consumption (1.35V for GDDR6 vs. 1.5V for GDDR5).
- Density: Up to 16Gb per chip.
- Speed: Up to 16 Gbps (GDDR6) vs. 8 Gbps (GDDR5).
- Applications: Gaming GPUs, AI accelerators.
If this is a serial number or custom part, check manufacturer specs (e.g., Samsung, Micron) for exact details. Clarify the product type for precise features.
Pinout
- Pin Count: 48-pin (TSOP package)
- Interface: SPI (Serial Peripheral Interface)
- Voltage: 3.3V
- Functions:
- Supports Quad I/O (fast read/write)
- On-die ECC for error correction
- Page size: 2KB + 64B spare
- Block size: 128KB
- Operating temp: -40°C to +85°C
Commonly used in embedded systems, IoT, and consumer electronics.
Application
1. Consumer Electronics – Smartphones, tablets, digital cameras.
2. Storage Devices – SSDs, USB drives, memory cards.
3. Embedded Systems – IoT devices, industrial controllers.
4. Automotive – Infotainment, ADAS, telematics.
5. Networking – Routers, switches, servers for data buffering.
It offers high-speed data transfer, reliability, and compact storage, making it suitable for applications requiring fast, non-volatile memory.