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SIC MOSFET 1200V 80M TO-247-4L
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HerstellerSemiQ
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Herstellerteil #GP2T080A120H
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Auf Lager80
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Spezifikationen
| Attribut | Wert |
| Supplier | SemiQ |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 35A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 20V |
| Rds On(Max) @ Id Vgs | 100mOhm @ 20A, 20V |
| Vgs(th)(Max) @ Id | 4V @ 10mA |
| Gate Charge(Qg)(Max) @ Vgs | 61 nC @ 20 V |
| Vgs(Max) | +25V, -10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1377 pF @ 1000 V |
| Power Dissipation (Max) | 188W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |