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GPA030A135MN-FDR
+StücklisteIGBT 1350V 60A 329W TO3PN
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HerstellerSemiQ
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Herstellerteil #GPA030A135MN-FDR
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Datenblatt GPA030A135MN-FDR DataSheet
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Paket TO-3P-3
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Auf Lager6487
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | SemiQ |
| Package / Case | Tube |
| Part Status | Obsolete |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown(Max) | 1350 V |
| Current - Collector(Ic)(Max) | 60 A |
| Current - Collector Pulsed(Icm) | 90 A |
| Vce(on)(Max) @ Vge Ic | 2.4V @ 15V, 30A |
| Power - Max | 329 W |
| Switching Energy | 4.4mJ (on), 1.18mJ (off) |
| Input Type | Standard |
| Gate Charge | 300 nC |
| Td(on / off) @ 25°C | 30ns/145ns |
| Test Condition | 600V, 30A, 5Ohm, 15V |
| Reverse Recovery Time (trr) | 450 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
