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GPI65005DF
+StücklisteGANFET N-CH 650V 5A DFN 5X6
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HerstellerGaNPower
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Herstellerteil #GPI65005DF
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Spezifikationen
| Attribut | Wert |
| Supplier | GaNPower |
| Package / Case | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 5A |
| Drive Voltage(Max Rds On Min Rds On) | 6V |
| Vgs(th)(Max) @ Id | 1.4V @ 1.75mA |
| Gate Charge(Qg)(Max) @ Vgs | 2.6 nC @ 6 V |
| Vgs(Max) | +7.5V, -12V |
| Input Capacitance(Ciss)(Max) @ Vds | 45 pF @ 400 V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
