Abbildungen dienen nur als Referenz
GT1003D
+StücklisteN100V,RD(MAX)<130M@10V,RD(MAX)<1
-
HerstellerGoford Halbleiter
-
Herstellerteil #GT1003D
-
Auf Lager5401
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Goford Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 3A |
| Rds On(Max) @ Id Vgs | 130mOhm @ 3A, 10V |
| Vgs(th)(Max) @ Id | 2.6V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 5.2 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 212 pF @ 50 V |
| Power Dissipation (Max) | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3L |
