Abbildungen dienen nur als Referenz
GT100N12T
+StücklisteN120V,RD(MAX)<10M@10V,VTH2.5V~3.
-
HerstellerGoford Halbleiter
-
Herstellerteil #GT100N12T
-
Auf Lager70
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Goford Semiconductor |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120 V |
| Current - Continuous Drain(Id) @ 25°C | 70A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 10mOhm @ 35A, 10V |
| Vgs(th)(Max) @ Id | 3.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3050 pF @ 60 V |
| Power Dissipation (Max) | 120W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
