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H26M52103FMR
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HerstellerJLCPCB-Baugruppe
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Herstellerteil #H26M52103FMR
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Auf Lager9338
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Spezifikationen
| Attribut | Wert |
| Manufacturer | JLCPCB Assembly |
| Package | BGA153 |
Übersicht
Description
The H26M52103FMR is a 3D NAND flash memory chip from SK Hynix, part of their eMMC (embedded MultiMediaCard) storage solutions. Key features include:
- Capacity: 128GB (other variants may exist).
- Interface: eMMC 5.1, ensuring high-speed data transfer.
- 3D NAND Technology: Enhances density and reliability.
- Applications: Used in smartphones, tablets, IoT devices, and embedded systems.
It integrates a flash memory controller, simplifying integration for OEMs. The chip offers balanced performance, power efficiency, and durability, making it suitable for consumer electronics and industrial applications.
For detailed specs, refer to the official SK Hynix datasheet.
- Capacity: 128GB (other variants may exist).
- Interface: eMMC 5.1, ensuring high-speed data transfer.
- 3D NAND Technology: Enhances density and reliability.
- Applications: Used in smartphones, tablets, IoT devices, and embedded systems.
It integrates a flash memory controller, simplifying integration for OEMs. The chip offers balanced performance, power efficiency, and durability, making it suitable for consumer electronics and industrial applications.
For detailed specs, refer to the official SK Hynix datasheet.
Equivalent
The H26M52103FMR is a 3D NAND flash memory chip from SK Hynix. Equivalent alternatives include:
- Samsung: K9DUGY8S5M (or similar 3D NAND chips)
- Micron: MT29F4T08GBCAG (or compatible 3D NAND)
- Toshiba/Kioxia: TH58LJT0T24BS8C (or similar)
Check datasheets for exact compatibility in pinout, voltage, and timing. Always verify with manufacturers for drop-in replacements.
- Samsung: K9DUGY8S5M (or similar 3D NAND chips)
- Micron: MT29F4T08GBCAG (or compatible 3D NAND)
- Toshiba/Kioxia: TH58LJT0T24BS8C (or similar)
Check datasheets for exact compatibility in pinout, voltage, and timing. Always verify with manufacturers for drop-in replacements.
Features
The H26M52103FMR is a 512Mb (64MB) NAND Flash memory chip with the following key features:
- Density: 512Mbit (64M x 8-bit)
- Interface: Asynchronous NAND Flash
- Voltage: 3.3V operation
- Organization: 2048+64 bytes per page, 64 pages per block (total 4096 blocks)
- Speed: Fast page access (25µs typical read time)
- Endurance: ~100K program/erase cycles per block
- Reliability: Built-in ECC (Error Correction Code) support
- Package: 48-pin TSOP (standard footprint)
- Applications: Consumer electronics, embedded systems, data storage
This chip is designed for cost-effective, high-density storage with moderate performance, suitable for devices requiring reliable NAND Flash memory.
- Density: 512Mbit (64M x 8-bit)
- Interface: Asynchronous NAND Flash
- Voltage: 3.3V operation
- Organization: 2048+64 bytes per page, 64 pages per block (total 4096 blocks)
- Speed: Fast page access (25µs typical read time)
- Endurance: ~100K program/erase cycles per block
- Reliability: Built-in ECC (Error Correction Code) support
- Package: 48-pin TSOP (standard footprint)
- Applications: Consumer electronics, embedded systems, data storage
This chip is designed for cost-effective, high-density storage with moderate performance, suitable for devices requiring reliable NAND Flash memory.
Pinout
The H26M52103FMR is a 3D TLC NAND flash memory chip from SK Hynix.
- Pin Count: 48 pins (TSOP-48 package).
- Function: Stores data in non-volatile memory, commonly used in SSDs, USB drives, and embedded storage.
- Key Features:
- Capacity: 256Gb (32GB).
- Interface: ONFI 2.3 (asynchronous/synchronous).
- Voltage: 3.3V operation.
- Speed: Up to 50MB/s (asynchronous) or 200MB/s (synchronous).
It supports standard NAND commands (read, write, erase) and includes error correction (ECC).
- Pin Count: 48 pins (TSOP-48 package).
- Function: Stores data in non-volatile memory, commonly used in SSDs, USB drives, and embedded storage.
- Key Features:
- Capacity: 256Gb (32GB).
- Interface: ONFI 2.3 (asynchronous/synchronous).
- Voltage: 3.3V operation.
- Speed: Up to 50MB/s (asynchronous) or 200MB/s (synchronous).
It supports standard NAND commands (read, write, erase) and includes error correction (ECC).
Package
The H26M52103FMR is a BGA (Ball Grid Array) package type. It's a 63-ball FBGA (Fine-Pitch Ball Grid Array) with dimensions of 9mm x 11mm. This package is commonly used for high-density memory chips like NAND flash, offering compact size and reliable electrical connections.
