HGTP10N120BN

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HGTP10N120BN

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IGBT 1200V 35A 298W TO220AB

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Spezifikationen

Attribut Wert
Package / Case Tube
Part Status Last Time Buy
IGBT Type NPT
Voltage - Collector Emitter Breakdown(Max) 1200 V
Current - Collector(Ic)(Max) 35 A
Current - Collector Pulsed(Icm) 80 A
Vce(on)(Max) @ Vge Ic 2.7V @ 15V, 10A
Power - Max 298 W
Switching Energy 320µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100 nC
Td(on / off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole

Übersicht

Description

The HGTP10N120BN is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for power switching applications. Key features include:
- Voltage Rating: 1200V
- Current Rating: 10A (continuous)
- Low Saturation Voltage (VCE(sat)): ~2.1V (typical)
- Fast Switching: Suitable for high-frequency inverters, motor drives, and UPS systems.
- Robust Design: Includes built-in freewheeling diode for inductive load protection.
This IGBT is commonly used in industrial and automotive applications where efficient high-voltage switching is required. Its TO-220 package ensures easy mounting and heat dissipation.
For detailed specifications, refer to the datasheet.

Equivalent

Equivalent products to the HGTP10N120BN (1200V, 10A IGBT) include:
- IRG4PH50UD (Infineon)
- HGTG10N120BN (Fairchild/ON Semi)
- STGW10NC120HD (STMicroelectronics)
- IXGH10N120B3 (Littelfuse/IXYS)
These are similar in voltage/current ratings and package (TO-247). Verify specs for exact compatibility.

Features

The HGTP10N120BN is a high-voltage IGBT with the following key features:
- Voltage Rating: 1200V
- Current Rating: 10A (collector current)
- Low VCE(sat): Ensures reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- High Input Impedance: Easy drive with low gate current
- Robust Design: Suitable for harsh environments
- Applications: Used in power supplies, motor drives, and inverters
This IGBT combines efficiency and reliability for medium-power switching applications.

Pinout

The HGTP10N120BN is a 3-pin IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications.
Pin Configuration & Functions:
1. Gate (G) – Controls switching via voltage input.
2. Collector (C) – Main current terminal (high voltage side).
3. Emitter (E) – Output/ground terminal.
Key Features:
- Voltage Rating: 1200V
- Current Rating: 10A
- Low VCE(sat) for efficient switching.
Commonly used in inverters, motor drives, and power supplies.

Manufacturer

The HGTP10N120BN is a high-power IGBT (Insulated Gate Bipolar Transistor) manufactured by Hitachi, a well-known Japanese multinational conglomerate.
Hitachi is a diversified company with businesses spanning electronics, power systems, industrial machinery, and IT. It is recognized for its expertise in semiconductors, energy solutions, and advanced industrial technologies.
The HGTP10N120BN is designed for high-voltage, high-efficiency applications like power converters and motor drives.

Package

The HGTP10N120BN is an IGBT (Insulated Gate Bipolar Transistor) in a TO-247 package. This package type is widely used for high-power applications due to its robust thermal and electrical performance. The TO-247 features three leads (gate, collector, emitter) and is designed for efficient heat dissipation, making it suitable for demanding power electronics like inverters and motor drives.

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