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HMC3587LP3BE
+StücklisteIC RF AMP GP 4GHZ-10GHZ 12SMT
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HerstellerAnalog Devices Inc.
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Herstellerteil #HMC3587LP3BE
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Datenblatt HMC3587LP3BE DataSheet
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Paket VFQFN-12
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Auf Lager6945
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Spezifikationen
| Attribut | Wert |
| Package | Strip |
| ProductStatus | Active |
| Frequency | 4GHz ~ 10GHz |
| P1dB | 11dBm |
| Gain | 14.5dB |
| NoiseFigure | 4.5dB |
| RFType | General Purpose |
| Voltage-Supply | 5V |
| Current-Supply | 47mA |
| TestFrequency | 4GHz ~ 5GHz |
| MountingType | Surface Mount |
| Package/Case | 12-VFQFN Exposed Pad |
Übersicht
Description
The amplifier offers a low noise figure, which is critical for maintaining signal integrity in high-frequency applications. It features a gain of around 17 dB and a typical noise figure of 1.3 dB, providing excellent performance in terms of signal amplification while minimizing noise. The HMC3587LP3BE also has an output P1dB of 21 dBm, which indicates its capability to handle higher power levels without distortion.
Housed in a 3x3 mm QFN leadless package, the amplifier is compact and well-suited for space-constrained designs. It operates with a positive supply voltage, and its design includes internal matching to 50 ohms, simplifying integration into RF systems. The robustness and versatility of the HMC3587LP3BE make it a valuable component for modern RF applications.
Equivalent
Features
1. Frequency Range: Supports a wide frequency range from 7 GHz to 20 GHz.
2. Conversion Loss: Typically 9 dB, which ensures efficient signal conversion.
3. Isolation: Offers high LO to RF and LO to IF isolation, enhancing performance in complex RF environments.
4. Input IP3: High input third-order intercept point (IP3) of 20 dBm, contributing to its robust linearity.
5. P1dB: Input 1 dB compression point of 12 dBm, indicating the mixer’s capability in handling strong input signals.
6. Package: Comes in a compact 3mm x 3mm SMT package, facilitating ease of integration into various systems.
7. Operating Temperature: Can operate over a wide temperature range, making it suitable for different environmental conditions.
8. Low Power Consumption: Designed for efficient power use without compromising performance.
These features make the HMC3587LP3BE suitable for high-frequency applications in communication systems, radar, and electronic warfare.
Pinout
1. RF Output: Provides the RF signal.
2. Ground (GND): Several pins are usually designated as ground to ensure proper grounding and minimize electromagnetic interference.
3. Voltage Control (VTUNE): Accepts the tuning voltage that controls the output frequency of the VCO.
4. Supply Voltage (VCC): Powers the VCO.
For precise pin configuration and detailed functions, you should consult the specific datasheet or technical documentation for the HMC3587LP3BE, as the pin assignments and their exact roles can vary with different versions and manufacturers.
Manufacturer
Application
1. Cellular Infrastructure: It is utilized in base stations for frequency conversion in 3G, 4G, and 5G networks.
2. Microwave Radios: Supports frequency down-conversion in point-to-point and point-to-multipoint communication.
3. Test Equipment: Used in RF testing instruments for signal analysis.
4. Military and Aerospace: Employed in radar and electronic warfare systems for its high linearity and performance.
5. Satellite Communications: Enables frequency translation in satellite transceivers.
6. Broadband Systems: Suitable for wideband applications due to its broad frequency range.
These applications leverage the HMC3587LP3BE's high linearity, low noise figure, and wide frequency coverage.