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HYG025N06LS1C2
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HerstellerHUAYI
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Herstellerteil #HYG025N06LS1C2
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Auf Lager2898
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Spezifikationen
| Attribut | Wert |
| Manufacturer | HUAYI |
| Package | DFN-8(5.2x5.9) |
| OperatingTemperature | -55℃~+175℃ |
| RDS(on) | 2.1mΩ@10V |
| DraintoSourceVoltage | 60V |
| Pd-PowerDissipation | 130W |
| Current-ContinuousDrain(Id) | 170A |
| ReverseTransferCapacitance(Crss@Vds) | 10.2pF |
| GateThresholdVoltage(Vgs(th)@Id) | 2.1V |
| GateCharge(Qg) | 59.5nC@10V |
| Number | 1 N-channel |
| InputCapacitance(Ciss) | 3.915nF@0V |
Übersicht
Description
HYG025N06LS1C2 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. This component features a low on-resistance, making it efficient for switching and amplifying electronic signals. With a voltage rating of 25V and a current rating of 60A, it is suitable for various applications such as power management, motor control, and switching power supplies.
Key specifications typically include a low gate threshold voltage, fast switching speeds, and high thermal stability, which enhance its performance in demanding environments. The package type is usually TO-220, enabling effective heat dissipation while facilitating easy mounting on PCB (Printed Circuit Boards).
HYG025N06LS1C2 is favored in industries such as automotive, telecommunications, and consumer electronics due to its reliability and efficiency. Proper handling and usage within specified limits are crucial for optimal performance and longevity of the device.
Key specifications typically include a low gate threshold voltage, fast switching speeds, and high thermal stability, which enhance its performance in demanding environments. The package type is usually TO-220, enabling effective heat dissipation while facilitating easy mounting on PCB (Printed Circuit Boards).
HYG025N06LS1C2 is favored in industries such as automotive, telecommunications, and consumer electronics due to its reliability and efficiency. Proper handling and usage within specified limits are crucial for optimal performance and longevity of the device.
Equivalent
The HYG025N06LS1C2 is an N-channel MOSFET. Equivalent products include the IRF3205, STP25NF06L, and BSS126 for similar specifications. Always check the datasheets for voltage, current ratings, and package compatibility to ensure suitability for your application.
Features
The HYG025N06LS1C2 is a high-performance N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Current Rating: The device can handle continuous drain currents of up to 25A, enabling it to drive substantial loads.
3. R_DS(on): It offers a low on-resistance (typically around 8 mΩ), which enhances efficiency by reducing conduction losses.
4. Fast Switching: The MOSFET has a fast switching speed, making it ideal for high-frequency applications.
5. Thermal Performance: It comes with a robust package that ensures effective heat dissipation, improving reliability and performance.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is low, allowing for easy drive from standard logic levels.
These features make the HYG025N06LS1C2 suitable for applications in power supplies, motor drivers, and DC-DC converters.
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Current Rating: The device can handle continuous drain currents of up to 25A, enabling it to drive substantial loads.
3. R_DS(on): It offers a low on-resistance (typically around 8 mΩ), which enhances efficiency by reducing conduction losses.
4. Fast Switching: The MOSFET has a fast switching speed, making it ideal for high-frequency applications.
5. Thermal Performance: It comes with a robust package that ensures effective heat dissipation, improving reliability and performance.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is low, allowing for easy drive from standard logic levels.
These features make the HYG025N06LS1C2 suitable for applications in power supplies, motor drivers, and DC-DC converters.
Pinout
The HYG025N06LS1C2 is a N-channel MOSFET, specifically designed for power applications. It typically comes in a TO-220 package, which has 3 pins.
Pin Count: 3
Pin Functions:
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied here turns the device on or off.
2. Drain (D): This is where the load is connected, and current flows out of this pin when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply, completing the circuit when the MOSFET is activated.
The device is rated for high efficiency and is suitable for applications like power management, DC-DC converters, and motor drivers.
Pin Count: 3
Pin Functions:
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied here turns the device on or off.
2. Drain (D): This is where the load is connected, and current flows out of this pin when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply, completing the circuit when the MOSFET is activated.
The device is rated for high efficiency and is suitable for applications like power management, DC-DC converters, and motor drivers.
Manufacturer
The HYG025N06LS1C2 is manufactured by Hyundai Electric & Energy Systems Co., Ltd. This company is a subsidiary of the Hyundai Group, which is primarily known for its automotive and industrial sectors. Hyundai Electric specializes in the production of electrical equipment, power generation systems, and semiconductor devices, including power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) like the HYG025N06LS1C2. The firm focuses on advancing technology in energy distribution, renewable energy solutions, and smart grid systems. Hyundai Electric is recognized for its innovation in electrical components and plays a significant role in the global semiconductor market.
Application
The HYG025N06LS1C2 is a N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. Power Conversion: Used in DC-DC converters and power supplies for efficient voltage regulation.
2. Motor Control: Ideal for driving DC motors and inverters in industrial and automotive applications.
3. Switching Applications: Utilized in electronic switching circuits for load management.
4. Battery Management: Employed in battery chargers and protection circuits to optimize performance and safety.
5. Consumer Electronics: Applied in devices requiring power-efficient switching.
Overall, it is favored for its high efficiency and fast switching capabilities in various electronic systems.
1. Power Conversion: Used in DC-DC converters and power supplies for efficient voltage regulation.
2. Motor Control: Ideal for driving DC motors and inverters in industrial and automotive applications.
3. Switching Applications: Utilized in electronic switching circuits for load management.
4. Battery Management: Employed in battery chargers and protection circuits to optimize performance and safety.
5. Consumer Electronics: Applied in devices requiring power-efficient switching.
Overall, it is favored for its high efficiency and fast switching capabilities in various electronic systems.
Package
The HYG025N06LS1C2 is packaged in a TO-220 format. This package type features a metal tab for enhanced heat dissipation, making it suitable for power applications.
