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DIODE GEN PURP 1.2KV 31A TO263-3
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HerstellerInfineon-Technologien
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Herstellerteil #IDB18E120ATMA1
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Datenblatt IDB18E120ATMA1 DataSheet
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Paket TO-263-3
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Auf Lager7396
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Bulk |
| Part Status | Obsolete |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io) | 31A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 2.15 V @ 18 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 195 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
