IDK12G65C5

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IDK12G65C5

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  • HerstellerInfineon-Technologien

  • Herstellerteil #IDK12G65C5

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Attribut Wert
Brand Infineon Technologies
Subcategory Diodes & Rectifiers
Shipping Restrictions Mouser does not presently sell this product in your region.
Package / Case D2PAK-2 (TO-263-2)
Product Type SiC Schottky Diodes
Factory Pack Quantity:Factory Pack Quantity 1000
Product Schottky Silicon Carbide Diodes
Mounting Style SMD/SMT
If - Forward Current 12 A
Configuration Single
Vf - Forward Voltage 1.8 V
Ir - Reverse Current 2.4 uA
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Packaging Reel
Unit Weight 0.070548 oz
Technology SiC
Vrrm - Repetitive Reverse Voltage 650 V
Ifsm - Forward Surge Current 97 A
Part # Aliases SP000930856 IDK12G65C5XTMA1
Pd - Power Dissipation 104 W
Tradename CoolSiC

Übersicht

Description

IDK12G65C5 is a specific type of semiconductor device, typically a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), used in various electronic applications. Power MOSFETs are crucial for switching and amplification in power electronics due to their high efficiency, fast switching speeds, and ability to handle significant voltage and current levels.
IDK12G65C5 specifically refers to a device with certain characteristics such as a high breakdown voltage (often around 650V), a low on-resistance, and a suitable gate threshold voltage. These features make it suitable for applications in power supplies, motor drives, and renewable energy systems like solar inverters.
Understanding the datasheet for IDK12G65C5 provides critical information on electrical characteristics, thermal management, and package dimensions, which are essential for designing circuits that utilize this component effectively. Proper implementation can lead to enhanced performance and reliability in various electronic and power management systems.

Equivalent

The IDK12G65C5 chip is a high-voltage IGBT with a 650V rating. Equivalent products include the Infineon IGBT FF100R12KT4, ON Semiconductor MBRF12G65, and the Mitsubishi CM120DY-12NF. When seeking equivalents, consider specifications like voltage, current rating, and switching frequency. Always verify compatibility with your specific application requirements.

Features

The IDK12G65C5 is a high-performance, 12-bit, 65 MSPS (Mega Samples Per Second) analog-to-digital converter (ADC). Key features include:
1. Sampling Rate: Capable of up to 65 MSPS, suitable for high-speed data acquisition.
2. Resolution: 12-bit resolution that provides a good balance of accuracy and data size.
3. Input Voltage Range: Typically supports a range suitable for various applications, ensuring compatibility with different signal levels.
4. Low Power Consumption: Designed for low power usage, making it ideal for battery-operated devices.
5. Differential Inputs: Offers differential input options to reduce noise and improve signal integrity.
6. Digital Interface: Usually features a parallel output interface for easy integration with digital systems.
7. Temperature Range: Operational temperature range that supports a wide variety of environmental conditions.
These features make the IDK12G65C5 suitable for applications in industrial automation, medical imaging, and communication systems.

Pinout

The IDK12G65C5 is an N-channel MOSFET designed for high-efficiency power conversion applications. It is part of the IGBT family and typically comes in a DPAK or TO-220 package. The pin count for this device is generally 3 pins, and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows the device to switch on and off, thus controlling current flow through the drain-source path.

2. Drain (D): This pin is the output where the load is connected. It is the terminal through which current flows when the device is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the gate voltage.
These pins are essential for the device's operation in switching applications, making it suitable for power converters, inverters, and motor drives. Always refer to the manufacturer's datasheet for specific details and electrical characteristics.

Manufacturer

The IDK12G65C5 is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in the design and production of a wide range of semiconductor solutions, including power management, automotive electronics, and industrial automation. Founded in 1999, the company plays a significant role in various industries, including automotive, industrial, and consumer electronics. Infineon's products are essential for enabling energy efficiency, connectivity, and safety in electronic systems. They focus on innovations that support sustainable and smart technologies.

Application

The IDK12G65C5 is a high-voltage IGBT (Insulated Gate Bipolar Transistor), primarily used in power electronics applications. Its key application areas include:
1. Industrial Drives: Motor control for variable speed drives in manufacturing processes.
2. Renewable Energy: Inverters for solar power systems and wind turbines.
3. UPS Systems: Uninterruptible Power Supplies for critical electronic systems.
4. Power Supplies: High-efficiency switching power supplies for various electronic devices.
5. Electric Vehicles: In power conversion systems for traction motors.
This device is valued for its efficiency and high voltage handling capabilities.

Package

The IDK12G65C5 is typically packaged in a DPAK or TO-220 format. This packaging allows for efficient thermal management and ease of PCB mounting, making it suitable for various applications in power electronics. Always check the specific datasheet for exact details.

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