IDW10G120C5B

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IDW10G120C5B

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  • HerstellerInfineon-Technologien

  • Herstellerteil #IDW10G120C5B

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Attribut Wert
Brand Infineon Technologies
Subcategory Diodes & Rectifiers
Product Type SiC Schottky Diodes
Packaging Tube
Technology SiC

Übersicht

Description

The IDW10G120C5B is a high-performance Power MOSFET designed for various applications, including power management and automotive systems. This device features a low on-resistance, which enhances efficiency and reduces power loss during operation. With a voltage rating typically around 120V and a current rating of 10A, it is suitable for high-voltage applications.
The IDW10G120C5B is characterized by fast switching capabilities, making it ideal for applications in switch-mode power supplies, DC-DC converters, and motor control circuits. Its robust thermal performance allows it to operate effectively in demanding environments.
The package design is optimized for thermal dissipation, ensuring reliable operation under high load conditions. The device is also compatible with various gate drive circuits, allowing for flexible integration into existing systems.
In summary, the IDW10G120C5B is a versatile and efficient MOSFET solution for modern electronic applications requiring reliable power management and control.

Equivalent

The IDW10G120C5B is a 1200V, 10A IGBT module. Equivalent products include the Infineon IGBT 10N120, Mitsubishi MGF30N120, and ON Semiconductor FGA120N120. Always check specifications for voltage, current ratings, and other parameters to ensure compatibility for your specific application.

Features

The IDW10G120C5B is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain currents of up to 10A, allowing for robust performance in demanding conditions.
3. R_DS(on): Low on-resistance (R_DS(on)) typically around 0.15 ohms, which minimizes conduction losses and improves overall efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, enabling better drive capability from low-voltage control signals.
5. Package Type: It comes in a TO-220 package, facilitating easy heat dissipation and mounting options.
6. Applications: Ideal for use in power supplies, motor drivers, and other applications requiring efficient switching.
These attributes make the IDW10G120C5B suitable for various industrial and consumer electronics applications that demand reliability and efficiency.

Pinout

The IDW10G120C5B is an IGBT (Insulated Gate Bipolar Transistor) module designed for power applications. It typically features a pin count of 5, which includes the following functions:
1. Vge (Gate): This pin is for the gate control voltage, used to turn the IGBT on and off.
2. Emitter (E): This pin connects to the emitter terminal of the IGBT, allowing current to flow from the collector to the emitter.
3. Collector (C): This pin connects to the collector terminal, where the load current is output.
4. Thermal Sensor (T): Some variants may include a thermal sensing pin for temperature monitoring.
5. Auxiliary Pins: Additional pins may be present for other control or monitoring functions.
The module is commonly used in applications like inverters, motor drives, and power converters due to its high efficiency and fast switching capabilities. For specific designs, always refer to the manufacturer's datasheet for detailed pin configurations and electrical characteristics.

Manufacturer

The IDW10G120C5B is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in a wide range of semiconductor solutions, including power semiconductors, sensor systems, and microcontrollers. The company serves various industries, such as automotive, industrial, and consumer electronics, with a strong emphasis on energy efficiency and performance. Infineon is known for its innovative technologies and products that cater to the growing demand for electronic components in applications like electric vehicles, renewable energy systems, and smart infrastructure.

Application

The IDW10G120C5B is an IGBT (Insulated Gate Bipolar Transistor) designed for high-power applications. Its primary application areas include:
1. Motor Drives: Used in variable frequency drives (VFDs) for industrial motors.
2. Power Supplies: Employed in switch-mode power supplies (SMPS) for efficient energy conversion.
3. Renewable Energy: Utilized in solar inverters and wind turbine converters.
4. Welding Equipment: Applied in industrial welding systems for precise control.
5. Industrial Automation: Found in automated machinery and robotics for controlling large loads.
Its features support efficient switching and thermal management, making it suitable for high-performance applications.

Package

The IDW10G120C5B is typically packaged in a TO-247 or similar high-power package, designed for efficient heat dissipation and ease of mounting on heatsinks, suitable for high-voltage and high-current applications.

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