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IGW40N120H3
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HerstellerInfineon-Technologien
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Herstellerteil #IGW40N120H3
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Auf Lager5116
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Spezifikationen
| Attribut | Wert |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Series | HighSpeed 3 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 175 C |
| Unit Weight | 1.340411 oz |
| Factory Pack Quantity | 240 |
| Part # Aliases | IGW4N12H3XK SP000667510 IGW40N120H3FKSA1 |
| Technology | Si |
| Configuration | Single |
| Collector - Emitter Voltage VCEO Max | 1.2 kV |
| Collector - Emitter Saturation Voltage | 2.05 V |
| Continuous Collector Current at 25 C | 80 A |
| Pd - Power Dissipation | 483 W |
| Gate - Emitter Leakage Current | 600 nA |
| Tradename | TRENCHSTOP |
Übersicht
Description
The IGW40N120H3 is a high-performance insulated gate bipolar transistor (IGBT) designed for industrial applications requiring efficient power conversion. With a voltage rating of 1200V and a current rating of 40A, it is suitable for high-power switching applications, such as inverters, motor drives, and power supplies.
The device features a low on-state voltage drop, allowing for reduced power losses and improved thermal management. Its fast switching capabilities enhance overall efficiency and enable higher frequency operation, making it ideal for applications in renewable energy systems and electric vehicles.
The H3 series incorporates advanced trench gate technology, which improves reliability and performance under various operating conditions. Additionally, the IGW40N120H3 is designed to handle high temperatures, ensuring robust operation in demanding environments.
Overall, the IGW40N120H3 is a versatile component that combines efficiency and reliability for modern power electronics.
The device features a low on-state voltage drop, allowing for reduced power losses and improved thermal management. Its fast switching capabilities enhance overall efficiency and enable higher frequency operation, making it ideal for applications in renewable energy systems and electric vehicles.
The H3 series incorporates advanced trench gate technology, which improves reliability and performance under various operating conditions. Additionally, the IGW40N120H3 is designed to handle high temperatures, ensuring robust operation in demanding environments.
Overall, the IGW40N120H3 is a versatile component that combines efficiency and reliability for modern power electronics.
Equivalent
The IGW40N120H3 is an IGBT (Insulated Gate Bipolar Transistor) from Infineon. Equivalent products include:
1. FGA40N120 - Fairchild Semiconductor
2. MW40N120 - ON Semiconductor
3. MITSUBISHI CM400HA-24H - Mitsubishi Electric
4. IRG4PH40K - Infineon (alternative series)
Always confirm with the manufacturer’s datasheets for specific applications and characteristics before replacement.
1. FGA40N120 - Fairchild Semiconductor
2. MW40N120 - ON Semiconductor
3. MITSUBISHI CM400HA-24H - Mitsubishi Electric
4. IRG4PH40K - Infineon (alternative series)
Always confirm with the manufacturer’s datasheets for specific applications and characteristics before replacement.
Features
The IGW40N120H3 is an IGBT (Insulated Gate Bipolar Transistor) designed for high-performance applications. Key features include:
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: 40A, allowing for significant current handling capabilities.
3. Low On-state Voltage: Ensures efficient operation and reduced power losses.
4. Fast Switching Speed: Enhances performance in high-frequency applications, reducing switching losses.
5. Robust Thermal Performance: Built to withstand high temperatures, aiding in heat dissipation.
6. Soft Recovery Characteristics: Minimizes electromagnetic interference (EMI) and stress on circuit components.
7. Isolation: Provides electrical isolation, improving safety and reliability in applications.
8. Package Type: Available in a compact, easy-to-mount package, facilitating integration in various systems.
These features make the IGW40N120H3 ideal for applications such as inverters, motor drives, and power supplies.
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: 40A, allowing for significant current handling capabilities.
3. Low On-state Voltage: Ensures efficient operation and reduced power losses.
4. Fast Switching Speed: Enhances performance in high-frequency applications, reducing switching losses.
5. Robust Thermal Performance: Built to withstand high temperatures, aiding in heat dissipation.
6. Soft Recovery Characteristics: Minimizes electromagnetic interference (EMI) and stress on circuit components.
7. Isolation: Provides electrical isolation, improving safety and reliability in applications.
8. Package Type: Available in a compact, easy-to-mount package, facilitating integration in various systems.
These features make the IGW40N120H3 ideal for applications such as inverters, motor drives, and power supplies.
Pinout
The IGW40N120H3 is an insulated gate bipolar transistor (IGBT) manufactured by Infineon Technologies. It features a pin count of 4. The pin configuration is as follows:
1. Gate (G): This pin is used to control the turn-on and turn-off of the IGBT.
2. Collector (C): This is the main current-carrying terminal, connected to the load.
3. Emitter (E): This pin serves as the return path for the current, connecting to ground or the negative side of the circuit.
4. Thermal Pad (T): The thermal pad is used for heat dissipation, providing a means to connect the device to a heatsink for improved thermal management.
The IGW40N120H3 is designed for high-power applications and offers features such as low on-state voltage drop and fast switching capabilities, making it suitable for use in power inverters, motor drives, and other industrial applications.
1. Gate (G): This pin is used to control the turn-on and turn-off of the IGBT.
2. Collector (C): This is the main current-carrying terminal, connected to the load.
3. Emitter (E): This pin serves as the return path for the current, connecting to ground or the negative side of the circuit.
4. Thermal Pad (T): The thermal pad is used for heat dissipation, providing a means to connect the device to a heatsink for improved thermal management.
The IGW40N120H3 is designed for high-power applications and offers features such as low on-state voltage drop and fast switching capabilities, making it suitable for use in power inverters, motor drives, and other industrial applications.
Manufacturer
The IGW40N120H3 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in semiconductor and system solutions that are key for various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in power semiconductors, sensor solutions, and security technologies.
Infineon's product portfolio includes MOSFETs, IGBTs, and other power electronic components, which are pivotal in energy management, electric vehicles, and renewable energy systems. The IGW40N120H3, specifically, is an Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications, providing efficient performance in power conversion systems.
As a prominent player in the semiconductor industry, Infineon is committed to innovation and sustainability, focusing on enabling smart and efficient energy use while supporting the transition to a greener economy.
Infineon's product portfolio includes MOSFETs, IGBTs, and other power electronic components, which are pivotal in energy management, electric vehicles, and renewable energy systems. The IGW40N120H3, specifically, is an Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications, providing efficient performance in power conversion systems.
As a prominent player in the semiconductor industry, Infineon is committed to innovation and sustainability, focusing on enabling smart and efficient energy use while supporting the transition to a greener economy.
Application
The IGW40N120H3 is an insulated gate bipolar transistor (IGBT) designed for high-power applications. Its primary application areas include:
1. Renewable Energy: Used in solar inverters and wind turbine converters.
2. Industrial Drives: Employed in motor control for various industrial machinery.
3. Power Supplies: Utilized in uninterruptible power supplies (UPS) and DC-DC converters.
4. Rail Transportation: Implemented in traction systems for trains and electric vehicles.
5. Heating Equipment: Used in induction heating and other high-frequency heating applications.
Its high voltage and current ratings make it suitable for demanding environments.
1. Renewable Energy: Used in solar inverters and wind turbine converters.
2. Industrial Drives: Employed in motor control for various industrial machinery.
3. Power Supplies: Utilized in uninterruptible power supplies (UPS) and DC-DC converters.
4. Rail Transportation: Implemented in traction systems for trains and electric vehicles.
5. Heating Equipment: Used in induction heating and other high-frequency heating applications.
Its high voltage and current ratings make it suitable for demanding environments.
Package
The IGW40N120H3 is typically packaged in a TO-247 package type. This packaging is designed for high-power semiconductor devices, providing efficient thermal management and ease of mounting in power applications.
