IHW50N65R5

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IHW50N65R5

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Attribut Wert
Brand Infineon Technologies
Product Type IGBT Transistors
Subcategory IGBTs
Packaging Tube
Maximum Gate Emitter Voltage - 20 V, 20 V
Technology Si
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C
Factory Pack Quantity 240
Package / Case TO-247-3
Mounting Type Through Hole
Configuration Single
Collector - Emitter Voltage VCEO Max 650 V
Collector - Emitter Saturation Voltage 1.35 V
Continuous Collector Current at 25 C 80 A
Pd - Power Dissipation 282 W
Series TRENCHSTOP 5 RC-H
Gate - Emitter Leakage Current 100 nA
Operating Temperature - 40 C to + 175 C
Tradename TRENCHSTOP
Part # Aliases SP001133104 IHW50N65R5XKSA1
Unit Weight 1.340411 oz

Übersicht

Description

The IHW50N65R5 is a high-performance insulated gate bipolar transistor (IGBT) designed for various industrial applications, including motor control and power conversion. With a voltage rating of 650V and a current rating of 50A, it offers efficient switching capabilities and low conduction losses, making it suitable for use in inverters, welding equipment, and other power electronics.
The device features a robust construction that enhances thermal performance and reliability. Its optimized gate drive characteristics allow for easier integration into different circuit designs. The IHW50N65R5 also incorporates soft-switching technology to minimize electromagnetic interference (EMI) and improve overall system efficiency.
This IGBT is part of a broader family of devices aimed at delivering high performance in demanding environments, ensuring longevity and stability in various applications.

Equivalent

The IHW50N65R5 is an N-channel IGBT (Insulated Gate Bipolar Transistor). Equivalent products include:
1. SiHG50N65 - from Infineon
2. FGA50N65 - from ON Semiconductor
3. IRG4PC50W - from Infineon
4. MIG50N65 - from Microsemi
Always verify specifications such as voltage, current, and switching speeds before substitution.

Features

The IHW50N65R5 is a high-voltage, N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: A maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It has a continuous drain current (Id) of 50A, enabling it to handle substantial loads.
3. RDS(on): Low on-resistance (RDS(on)) of 0.5 ohms at 10V, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: Designed for rapid switching, it provides improved performance in applications like switch-mode power supplies and inverters.
5. Thermal Performance: High thermal stability and a robust package allow for better heat dissipation.
6. Gate Threshold Voltage: A gate threshold voltage (Vgs(th)) ranging from 2V to 4V facilitates easy drive requirements.
These features make the IHW50N65R5 ideal for applications in renewable energy systems, automotive, and industrial power supplies.

Pinout

The IHW50N65R5 is an N-channel power MOSFET with a pin count of 4. It typically comes in a TO-220 package. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET operation; applying a voltage here allows current to flow between the drain and source.
2. Drain (D): The terminal where current flows out of the MOSFET; connected to the load.
3. Source (S): The terminal where current enters the MOSFET; typically connected to ground in common-source configurations.
4. Tab (or Heatsink): Often connected to the source terminal for heat dissipation purposes.
The IHW50N65R5 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of 50A. It is commonly used in power supply circuits, motor control, and other high-power applications.

Manufacturer

The IHW50N65R5 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on enhancing energy efficiency, mobility, and security. Infineon is recognized for its innovations in power management and is a key player in the development of semiconductor technologies that support sustainable energy solutions.

Application

The IHW50N65R5 is an N-channel IGBT (Insulated Gate Bipolar Transistor) that is commonly used in various applications due to its high voltage and current ratings. Key application areas include:
1. Industrial Drives - Used in motor control and variable frequency drives.
2. Renewable Energy - Employed in solar inverters and wind turbine converters.
3. Power Supply - Utilized in switch-mode power supplies (SMPS) and UPS systems.
4. Welding Equipment - Ideal for inverter-based welding systems.
5. HVAC Systems - Used in heat pumps and air conditioning compressors.
Its efficiency and thermal performance make it suitable for high-power applications.

Package

The IHW50N65R5 is typically packaged in an TO-247 format, which is a type of through-hole package designed for power devices. This package provides effective heat dissipation and is commonly used for high-power applications.

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