Abbildungen dienen nur als Referenz
IKW75N60H3
+StücklisteIKW75N60 - DISCRETE IGBT WITH AN
-
HerstellerInfineon-Technologien
-
Herstellerteil #IKW75N60H3
-
Datenblatt IKW75N60H3 DataSheet
-
Paket TO-247-3
-
Auf Lager5227
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Bulk |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 80 A |
| Current-CollectorPulsed(Icm) | 225 A |
| Vce(on)(Max)@VgeIc | 2.3V @ 15V, 75A |
| Power-Max | 428 W |
| SwitchingEnergy | 3mJ (on), 1.7mJ (off) |
| InputType | Standard |
| GateCharge | 470 nC |
| Td(on/off)@25°C | 31ns/265ns |
| TestCondition | 400V, 75A, 5.2Ohm, 15V |
| ReverseRecoveryTime(trr) | 190 ns |
| OperatingTemperature | -40°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
Übersicht
Description
The IKW75N60H3 is a high-performance insulated-gate bipolar transistor (IGBT) designed for use in power electronics applications. It is known for its efficiency and reliability in switching operations, making it suitable for industrial applications such as motor drives, inverters, and power supplies.
This IGBT features a voltage rating of 600V and a current rating of 75A, providing a robust solution for medium to high-power applications. Its design incorporates a fast-switching Trench Field Stop technology, which helps reduce switching losses and enhance overall system efficiency. The IKW75N60H3 also boasts a low saturation voltage, contributing to reduced conduction losses.
Additionally, the device is equipped with integrated protection features, such as short-circuit and over-temperature protection, enhancing its durability and lifespan under challenging operating conditions. The IKW75N60H3 is typically housed in a TO-247 package, facilitating easy integration into existing systems.
Overall, the IKW75N60H3 offers a balanced combination of performance, efficiency, and reliability, making it a favored choice in various high-demand power electronics scenarios.
This IGBT features a voltage rating of 600V and a current rating of 75A, providing a robust solution for medium to high-power applications. Its design incorporates a fast-switching Trench Field Stop technology, which helps reduce switching losses and enhance overall system efficiency. The IKW75N60H3 also boasts a low saturation voltage, contributing to reduced conduction losses.
Additionally, the device is equipped with integrated protection features, such as short-circuit and over-temperature protection, enhancing its durability and lifespan under challenging operating conditions. The IKW75N60H3 is typically housed in a TO-247 package, facilitating easy integration into existing systems.
Overall, the IKW75N60H3 offers a balanced combination of performance, efficiency, and reliability, making it a favored choice in various high-demand power electronics scenarios.
Equivalent
The IKW75N60H3 is an IGBT (Insulated Gate Bipolar Transistor) used for power switching applications. Equivalent products might include similar IGBTs from other manufacturers with comparable ratings. Examples include:
1. IGW75N60H3 from Infineon
2. FGH75N60SFD from ON Semiconductor
3. HGTG30N60A4 from Microsemi
4. IRG7PK35UD from Infineon/International Rectifier
Always verify the specifications and ratings to ensure compatibility with your specific application.
1. IGW75N60H3 from Infineon
2. FGH75N60SFD from ON Semiconductor
3. HGTG30N60A4 from Microsemi
4. IRG7PK35UD from Infineon/International Rectifier
Always verify the specifications and ratings to ensure compatibility with your specific application.
Features
The IKW75N60H3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies. Key features include:
1. Voltage and Current Ratings: It typically supports a collector-emitter voltage (V_CE) of up to 600V and a continuous collector current (I_C) of 75A, making it suitable for high voltage and high current applications.
2. Technology: The IGBT utilizes Infineon's Trench and Fieldstop technology, which enhances performance by reducing switching losses and improving efficiency.
3. Switching Speed: Designed for high-speed switching, it is ideal for applications requiring rapid on-off cycles, such as inverters and power supplies.
4. Low Saturation Voltage: It features a low V_CE(sat), resulting in reduced conduction losses.
5. Short Circuit Rated: The device is designed to withstand short circuits, providing robustness in harsh operating conditions.
6. Thermal Performance: It is equipped with excellent thermal characteristics, supporting efficient heat dissipation and prolonged lifespan.
These attributes make the IKW75N60H3 suitable for use in industrial drives, renewable energy systems, and various consumer electronics where efficient power management is crucial.
1. Voltage and Current Ratings: It typically supports a collector-emitter voltage (V_CE) of up to 600V and a continuous collector current (I_C) of 75A, making it suitable for high voltage and high current applications.
2. Technology: The IGBT utilizes Infineon's Trench and Fieldstop technology, which enhances performance by reducing switching losses and improving efficiency.
3. Switching Speed: Designed for high-speed switching, it is ideal for applications requiring rapid on-off cycles, such as inverters and power supplies.
4. Low Saturation Voltage: It features a low V_CE(sat), resulting in reduced conduction losses.
5. Short Circuit Rated: The device is designed to withstand short circuits, providing robustness in harsh operating conditions.
6. Thermal Performance: It is equipped with excellent thermal characteristics, supporting efficient heat dissipation and prolonged lifespan.
These attributes make the IKW75N60H3 suitable for use in industrial drives, renewable energy systems, and various consumer electronics where efficient power management is crucial.
Pinout
The IKW75N60H3 is an IGBT (Insulated Gate Bipolar Transistor) typically used in power switching applications. It is not a multi-pin package like ICs; instead, it is usually housed in a TO-247 or similar package, which typically has three pins:
1. Collector (C): This is the main current-carrying terminal. The collector is connected to the positive side of the power supply.
2. Gate (G): This terminal controls the IGBT. A voltage applied here regulates the flow of current between the collector and emitter.
3. Emitter (E): This is the terminal where the current exits the IGBT. It is typically connected to the load or ground.
The IKW75N60H3 is rated for high voltage and current, making it suitable for applications like motor drives, inverters, and power supplies. The specific characteristics include a collector-emitter voltage of up to 600V and a continuous collector current of 75A.
1. Collector (C): This is the main current-carrying terminal. The collector is connected to the positive side of the power supply.
2. Gate (G): This terminal controls the IGBT. A voltage applied here regulates the flow of current between the collector and emitter.
3. Emitter (E): This is the terminal where the current exits the IGBT. It is typically connected to the load or ground.
The IKW75N60H3 is rated for high voltage and current, making it suitable for applications like motor drives, inverters, and power supplies. The specific characteristics include a collector-emitter voltage of up to 600V and a continuous collector current of 75A.
Manufacturer
The IKW75N60H3 is manufactured by Infineon Technologies. Infineon Technologies is a German semiconductor manufacturer that designs and produces a wide range of semiconductor solutions including microcontrollers, power semiconductors, and sensors. The company operates globally and serves various industries such as automotive, industrial, and consumer electronics. Infineon is known for its focus on innovation in energy efficiency, mobility, and security solutions.
Application
The IKW75N60H3 is an IGBT (Insulated Gate Bipolar Transistor) commonly used in power electronic applications. Its primary application areas include:
1. Inverters and UPS Systems: For efficient power conversion and backup power solutions.
2. Motor Drives: In industrial and commercial motor control applications.
3. Switch Mode Power Supplies (SMPS): To enhance efficiency in power supply units.
4. Renewable Energy Systems: Such as solar inverters and wind turbines.
5. Induction Heating: Utilized in high-frequency induction heating applications.
6. Welding Equipment: For efficient power handling in welding machines.
These applications benefit from the IGBT's high efficiency, fast switching, and robust performance under varying conditions.
1. Inverters and UPS Systems: For efficient power conversion and backup power solutions.
2. Motor Drives: In industrial and commercial motor control applications.
3. Switch Mode Power Supplies (SMPS): To enhance efficiency in power supply units.
4. Renewable Energy Systems: Such as solar inverters and wind turbines.
5. Induction Heating: Utilized in high-frequency induction heating applications.
6. Welding Equipment: For efficient power handling in welding machines.
These applications benefit from the IGBT's high efficiency, fast switching, and robust performance under varying conditions.
Package
The IKW75N60H3 is an IGBT (Insulated Gate Bipolar Transistor) with a TO-247 package type. This package is commonly used for high-power applications, providing efficient heat dissipation and compactness.
