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IMZ120R030M1H
+StücklisteSiC MOSFETs SIC DISCRETE
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HerstellerInfineon-Technologien
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Herstellerteil #IMZ120R030M1H
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Datenblatt IMZ120R030M1H DataSheet
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Auf Lager3058
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | Tube |
Übersicht
Description
Key features of the IMZ120R030M1H include high-speed switching capabilities, reduced switching losses, and superior thermal performance, enhancing overall system efficiency. Its design also ensures robustness against voltage spikes and high temperatures, which improves reliability in demanding environments.
This MOSFET is typically used in applications requiring high power density and efficiency and is appreciated for its ability to handle high switching frequencies, which allows designers to reduce the size of associated passive components like inductors and transformers. Its compact package facilitates efficient space utilization in circuit designs.
Equivalent
1. STMicroelectronics' STP120N10F7
2. ON Semiconductor's NTP125N10
3. Vishay's SiHP122N10E
Always verify the specifications and thermal performance to ensure compatibility for your specific application.
Features
1. Low RDS(on): It offers a low on-resistance, enhancing power efficiency and reducing energy loss.
2. High Current Capability: Designed to handle high current loads, suitable for demanding applications.
3. Fast Switching: Provides rapid turn-on and turn-off times, improving overall system efficiency.
4. Thermal Performance: Excellent thermal performance allows for reliable operation under high temperatures.
5. Robust Construction: Built to withstand harsh environments with strong resistance to stress and strain.
6. Compact Package: Available in a compact package for space-saving in design, making it ideal for compact devices.
7. Wide Range of Applications: Suitable for use in power supplies, motor drives, and other high-power applications.
These features make the IMZ120R030M1H a versatile and reliable component for various high-performance electronic circuits.
Pinout
The TO-247 package typically has 3 pins:
1. Gate (G): Used to control the MOSFET's conduction state.
2. Drain (D): The main terminal through which current flows when the MOSFET is on.
3. Source (S): The terminal through which current exits the MOSFET.
The IMZ120R030M1H is characterized by a low on-resistance, which contributes to reduced power losses and increased efficiency in power conversion applications. It is commonly used in applications such as SMPS (Switch Mode Power Supplies), PFC (Power Factor Correction), and other high-performance power electronic systems.
Manufacturer
Application
1. Power Supply Units (PSUs): It's commonly used in switched-mode power supplies (SMPS) for efficient energy conversion.
2. Industrial Drives: The device supports motor control applications, enhancing the energy efficiency of industrial machinery.
3. Renewable Energy Systems: It's applicable in inverters for solar and wind energy systems due to its high efficiency and reliability.
4. Automotive Systems: Suitable for electric vehicle powertrains and onboard chargers.
5. Consumer Electronics: Utilized in power adapters and chargers for various electronics to improve power management and efficiency.
The IMZ120R030M1H's low on-resistance and high-speed switching capabilities make it versatile across these fields.