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IMZ120R090M1H
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HerstellerInfineon-Technologien
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Herstellerteil #IMZ120R090M1H
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Auf Lager6519
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Technology | SiC |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | SiC MOSFETS |
| Subcategory | Transistors |
Übersicht
Description
This module is known for its low conduction and switching losses, which contribute to improved efficiency and thermal management. It typically includes integrated freewheeling diodes, enhancing its performance in applications involving inductive loads. The IMZ120R090M1H is packaged in a compact, robust design, facilitating easy integration into power electronic systems.
Engineered for reliability and durability, it meets the stringent requirements of various sectors, including automotive, renewable energy, and industrial automation. The module is ideal for engineers looking for a reliable solution for high-power applications, promoting energy efficiency and system performance.
Equivalent
Features
1. Voltage Rating: Maximum drain-source voltage (VDS) of 900V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (ID) of 120A, allowing for substantial power handling.
3. Low On-Resistance: With a typical RDS(on) of 0.090Ω, it offers efficient conduction and reduced power losses.
4. Fast Switching: Optimized for rapid switching speeds, enhancing performance in applications like converters and inverters.
5. Thermal Performance: Equipped with a robust package design that supports effective heat dissipation, ensuring reliable operation at elevated temperatures.
6. Gate Threshold Voltage: Low gate threshold voltage (VGS(th)), facilitating easier drive requirements.
7. Package Type: Available in an efficient TO-247 package, suitable for various mounting configurations.
These features make the IMZ120R090M1H ideal for use in power management systems, motor drives, and renewable energy applications.
Pinout
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal, usually connected to ground or the negative side of the power supply.
4. Gate (G) - As per typical MOSFET layout, there may be a second gate pin for certain configurations.
5. Source (S) - A second source pin, which might be provided for enhanced thermal performance and current handling.
This device is commonly used in applications such as synchronous rectification, DC-DC converters, and motor drives, emphasizing its capability to handle high currents and voltages efficiently. Always refer to the specific datasheet for detailed pin configuration and electrical characteristics.
Manufacturer
Application
1. Motor Drives: Used in variable frequency drives for controlling AC motors.
2. Renewable Energy: Employed in photovoltaic inverters and wind turbine converters.
3. Power Supplies: Utilized in high-efficiency switch-mode power supplies.
4. Railway Applications: Used in traction systems for electric trains.
5. Industrial Automation: Applied in robotics and automation systems for efficient energy management.
Its high efficiency and thermal performance make it suitable for demanding power electronic applications.