IMZ120R090M1H

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IMZ120R090M1H

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  • HerstellerInfineon-Technologien

  • Herstellerteil #IMZ120R090M1H

  • Auf Lager6519

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Spezifikationen

Attribut Wert
Technology SiC
Packaging Tube
Brand Infineon Technologies
Product Type SiC MOSFETS
Subcategory Transistors

Übersicht

Description

The IMZ120R090M1H is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for efficient power conversion applications, such as inverters and converters in industrial and renewable energy systems. It features a rated current of 120A and a maximum blocking voltage of 900V, making it suitable for medium-voltage applications.
This module is known for its low conduction and switching losses, which contribute to improved efficiency and thermal management. It typically includes integrated freewheeling diodes, enhancing its performance in applications involving inductive loads. The IMZ120R090M1H is packaged in a compact, robust design, facilitating easy integration into power electronic systems.
Engineered for reliability and durability, it meets the stringent requirements of various sectors, including automotive, renewable energy, and industrial automation. The module is ideal for engineers looking for a reliable solution for high-power applications, promoting energy efficiency and system performance.

Equivalent

The IMZ120R090M1H is an IGBT (Insulated Gate Bipolar Transistor) module commonly used in industrial applications. Equivalent products include the FZ120R09KE3 from Infineon, the STG120R090 from STMicroelectronics, and the MG120J2YS41 from Mitsubishi Electric. Always verify specifications and performance characteristics to ensure compatibility for your specific application.

Features

The IMZ120R090M1H is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (VDS) of 900V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (ID) of 120A, allowing for substantial power handling.
3. Low On-Resistance: With a typical RDS(on) of 0.090Ω, it offers efficient conduction and reduced power losses.
4. Fast Switching: Optimized for rapid switching speeds, enhancing performance in applications like converters and inverters.
5. Thermal Performance: Equipped with a robust package design that supports effective heat dissipation, ensuring reliable operation at elevated temperatures.
6. Gate Threshold Voltage: Low gate threshold voltage (VGS(th)), facilitating easier drive requirements.
7. Package Type: Available in an efficient TO-247 package, suitable for various mounting configurations.
These features make the IMZ120R090M1H ideal for use in power management systems, motor drives, and renewable energy applications.

Pinout

The IMZ120R090M1H is a power MOSFET from Infineon Technologies, specifically designed for high-efficiency applications. It features a total of 6 pins. The function of each pin is as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal, usually connected to ground or the negative side of the power supply.
4. Gate (G) - As per typical MOSFET layout, there may be a second gate pin for certain configurations.
5. Source (S) - A second source pin, which might be provided for enhanced thermal performance and current handling.
This device is commonly used in applications such as synchronous rectification, DC-DC converters, and motor drives, emphasizing its capability to handle high currents and voltages efficiently. Always refer to the specific datasheet for detailed pin configuration and electrical characteristics.

Manufacturer

The IMZ120R090M1H is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in developing semiconductor and system solutions for automotive, industrial, and multimarket applications. The company is known for its expertise in power management, automotive electronics, security technologies, and microcontrollers. Infineon plays a significant role in advancing technologies related to energy efficiency and sustainability, focusing on sectors like electric mobility and renewable energy. Their products are widely used in various applications, including automotive systems, industrial automation, and consumer electronics.

Application

The IMZ120R090M1H is an IGBT module used primarily in industrial applications. Key areas include:
1. Motor Drives: Used in variable frequency drives for controlling AC motors.
2. Renewable Energy: Employed in photovoltaic inverters and wind turbine converters.
3. Power Supplies: Utilized in high-efficiency switch-mode power supplies.
4. Railway Applications: Used in traction systems for electric trains.
5. Industrial Automation: Applied in robotics and automation systems for efficient energy management.
Its high efficiency and thermal performance make it suitable for demanding power electronic applications.

Package

The IMZ120R090M1H is available in a TO-247 package type. This package is designed for high-power applications, providing efficient heat dissipation and robust performance in power electronics.

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