IPA083N10N5

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IPA083N10N5

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  • HerstellerInfineon-Technologien

  • Herstellerteil #IPA083N10N5

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Spezifikationen

Attribut Wert
Technology Si
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Mounting Type Through Hole
Height 16.15 mm
Length 10.65 mm
Width 4.85 mm
Unit Weight 0.068784 oz
Package / Case TO-220FP-3

Übersicht

Description

IPA083N10N5 is a high-performance N-channel MOSFET designed for various applications, including power management and switch-mode power supplies. It features a low on-resistance (RDS(on)), which enhances efficiency by minimizing power loss during operation. The device typically supports a maximum drain-source voltage (VDS) of around 80V and a continuous drain current (ID) of approximately 83A, making it suitable for handling significant power levels.
The MOSFET's fast switching capabilities enable efficient operation in high-frequency applications, reducing heat generation and improving overall system performance. Additionally, it is packaged in a TO-220 format, facilitating easy heat dissipation and integration into various electronic circuits.
This component is widely used in automotive, industrial, and consumer electronics, where reliability and performance are crucial. When utilizing IPA083N10N5, proper thermal management and adherence to the specified maximum ratings are essential for optimal functionality.

Equivalent

The IPA083N10N5 is an N-channel MOSFET, and equivalent products include the IRF3205, STP75NF75, and BUK9545-55A. These alternatives offer similar voltage and current ratings, typically utilized in power management applications. Always check the specific datasheet for exact specifications and ensure compatibility with your circuit requirements.

Features

The IPA083N10N5 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 83A, allowing for robust performance in power switching applications.
3. R_DS(on): The on-resistance is low, usually around 10 mΩ, which leads to reduced conduction losses and improved efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is relatively low, enabling easy driving by standard logic levels.
5. Package: It is commonly available in TO-220 or similar packages, which facilitate effective heat dissipation.
6. Fast Switching: Optimized for fast switching capabilities, making it ideal for applications like DC-DC converters and motor drivers.
Overall, the IPA083N10N5 is well-suited for power management and high-efficiency applications in consumer electronics, automotive, and industrial sectors.

Pinout

The IPA083N10N5 is a high-performance N-channel MOSFET with a pin count of 5. Its typical functions include serving as a switch in power management applications, particularly in DC-DC converters, motor controls, and other high-efficiency circuits.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - Connects to the load; current flows from the drain to the source when the MOSFET is on.
3. Source (S) - Connects to ground (or the lower potential) in typical applications.
4. Gate-Source (G-S) diode - Provides protection against negative gate-source voltage.
5. Thermal pad - For heat dissipation, improving thermal performance.
The device features low on-resistance and high-speed switching, making it suitable for various applications in power electronics. Always refer to the datasheet for detailed specifications and ratings.

Manufacturer

The IPA083N10N5 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. Founded in 1999, Infineon operates globally and serves various markets, such as automotive, industrial, and communication sectors. The company is known for its innovation in energy efficiency and advanced technology, making it a key player in the semiconductor industry.

Application

The IPA083N10N5 is an N-channel MOSFET designed for high-performance applications. Its primary application areas include power management in industrial systems, automotive power supplies, and DC-DC converters. It is also used in electric motor drives, switch-mode power supplies (SMPS), and renewable energy systems like solar inverters. The device's low on-resistance and fast switching capabilities make it suitable for efficient power control in consumer electronics and telecommunications. Additionally, it can be utilized in battery management systems and electric vehicle applications for optimal power distribution and efficiency.

Package

The IPA083N10N5 is typically available in a TO-220 package type. This package is designed for efficient thermal management and is commonly used for power transistors and devices requiring heat dissipation.

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