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IPA50R190CE
+StücklisteMOSFET N-CH 500V 18.5A TO220-FP
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HerstellerInfineon-Technologien
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Herstellerteil #IPA50R190CE
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Auf Lager4856
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
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Spezifikationen
| Attribut | Wert |
| Series | CoolMOS™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 6.2A, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 510µA |
| Gate Charge (Qg) (Max) @ Vgs | 47.2 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1137 pF @ 100 V |
| Power Dissipation (Max) | 32W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-FP |
| Package / Case | TO-220-3 Full Pack |
| Base Product Number | IPA50R |
Übersicht
Description
The IPA50R190CE is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It is part of Infineon's CoolMOS technology, which focuses on reducing switching losses and improving thermal performance.
Key features include a high voltage rating of 500V and a drain current capability of up to 50A, making it suitable for tasks like power supply conversion, motor control, and other high-voltage applications. The device boasts a low on-resistance (RDS(on)), which minimizes power dissipation during operation, enhancing overall efficiency.
Package options typically include TO-220 and DPAK, allowing for easy integration into various circuit designs. The IPA50R190CE is particularly valued in sectors like renewable energy, industrial automation, and consumer electronics, where reliability and performance are critical.
Key features include a high voltage rating of 500V and a drain current capability of up to 50A, making it suitable for tasks like power supply conversion, motor control, and other high-voltage applications. The device boasts a low on-resistance (RDS(on)), which minimizes power dissipation during operation, enhancing overall efficiency.
Package options typically include TO-220 and DPAK, allowing for easy integration into various circuit designs. The IPA50R190CE is particularly valued in sectors like renewable energy, industrial automation, and consumer electronics, where reliability and performance are critical.
Equivalent
The IPA50R190CE is an IGBT (Insulated Gate Bipolar Transistor) from Infineon. Equivalent products include the STGW50H120 from STMicroelectronics, the FGA50N120 from Fairchild, and the MG50J3YS3 from Mitsubishi. When selecting an equivalent, ensure to match specifications like voltage, current ratings, and switching characteristics. Always verify with the datasheets for exact compatibility.
Features
The IPA50R190CE is a high-performance N-channel MOSFET featuring a voltage rating of 500V and a continuous drain current of 50A. Key features include:
1. Low On-Resistance (RDS(on)): Offers low resistance for enhanced efficiency and reduced power loss.
2. High-Speed Switching: Designed for fast switching applications, making it suitable for power supply and inverter circuits.
3. Thermal Stability: Provides excellent thermal performance, allowing for higher operating temperatures.
4. Enhanced Gate Drive: Compatible with various gate drive voltages for versatile applications.
5. Robust Packaging: Typically available in TO-220 or similar packages, ensuring effective heat dissipation.
Ideal for applications in industrial power supplies, motor drives, and renewable energy systems, the IPA50R190CE combines reliability with high efficiency, making it a strong choice for demanding power electronics.
1. Low On-Resistance (RDS(on)): Offers low resistance for enhanced efficiency and reduced power loss.
2. High-Speed Switching: Designed for fast switching applications, making it suitable for power supply and inverter circuits.
3. Thermal Stability: Provides excellent thermal performance, allowing for higher operating temperatures.
4. Enhanced Gate Drive: Compatible with various gate drive voltages for versatile applications.
5. Robust Packaging: Typically available in TO-220 or similar packages, ensuring effective heat dissipation.
Ideal for applications in industrial power supplies, motor drives, and renewable energy systems, the IPA50R190CE combines reliability with high efficiency, making it a strong choice for demanding power electronics.
Pinout
The IPA50R190CE is an N-channel MOSFET manufactured by Infineon Technologies. It is part of the CoolMOS series designed for high efficiency and fast switching applications. The device features a total of 5 pins.
Pin Functions:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the main current flows out.
3. Source (S) - The terminal through which the main current enters the MOSFET.
4. Body diode - Integrated as part of the structure, allowing for reverse current flow when required.
5. Tab - Often connected to the source for heat dissipation.
The IPA50R190CE is rated for a maximum drain-source voltage of 650V and a continuous drain current of 50A, making it suitable for applications like power supplies, converters, and motor drives.
Pin Functions:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the main current flows out.
3. Source (S) - The terminal through which the main current enters the MOSFET.
4. Body diode - Integrated as part of the structure, allowing for reverse current flow when required.
5. Tab - Often connected to the source for heat dissipation.
The IPA50R190CE is rated for a maximum drain-source voltage of 650V and a continuous drain current of 50A, making it suitable for applications like power supplies, converters, and motor drives.
Manufacturer
The IPA50R190CE is manufactured by Infineon Technologies, a prominent semiconductor company based in Germany. Founded in 1999, Infineon specializes in providing innovative semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in power semiconductors, microcontrollers, and sensors, contributing significantly to advancements in energy efficiency and smart technologies. Infineon’s products are widely used in applications ranging from electric vehicles to renewable energy systems, showcasing its commitment to sustainability and cutting-edge technology. The IPA50R190CE itself is an IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power management in industrial applications.
Application
The IPA50R190CE is an N-channel MOSFET primarily used in power electronics applications. Its key areas include:
1. Switching Power Supplies: Efficient conversion and regulation of voltage.
2. Motor Drives: Control of electric motors in industrial and automotive applications.
3. Inverters: Conversion of DC to AC power for renewable energy systems.
4. Power Amplifiers: Enhancing signal strength in RF applications.
5. Audio Equipment: Improving sound quality in high-fidelity amplifiers.
Its high voltage and current ratings make it suitable for applications requiring robust performance and efficiency.
1. Switching Power Supplies: Efficient conversion and regulation of voltage.
2. Motor Drives: Control of electric motors in industrial and automotive applications.
3. Inverters: Conversion of DC to AC power for renewable energy systems.
4. Power Amplifiers: Enhancing signal strength in RF applications.
5. Audio Equipment: Improving sound quality in high-fidelity amplifiers.
Its high voltage and current ratings make it suitable for applications requiring robust performance and efficiency.
Package
The IPA50R190CE is packaged in a TO-247 format, which is a robust, three-terminal package commonly used for high-power applications. This package type provides excellent thermal management and electrical performance.
