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IPA60R160P6
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HerstellerInfineon-Technologien
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Herstellerteil #IPA60R160P6
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Paket TO-220-3
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Auf Lager3400
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS P6 |
| Factory Pack Quantity | 500 |
| Subcategory | Transistors |
| Part # Aliases | SP001017082 IPA60R160P6XKSA1 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Width | 4.85 mm |
| Unit Weight | 2 g |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 23.8 A |
| Rds On | 144 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 44 nC |
| Pd - Power Dissipation | 34 W |
| Channel Mode | Enhancement |
| Fall Time | 5.8 ns |
| Rise Time | 7.6 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 40 ns |
| Typical Turn - On Delay Time | 12.5 ns |
| Package / Case | TO-220-3 |
Übersicht
Description
The IPA60R160P6 is a silicon carbide (SiC) MOSFET designed for high-performance power applications. It features a voltage rating of 600V and a current rating of 160A, making it suitable for use in various demanding environments, such as industrial motor drives, power supplies, and renewable energy systems. The device offers low on-resistance and fast switching capabilities, which contribute to improved efficiency and reduced heat generation in power conversion applications.
The IPA60R160P6 is part of Infineon's CoolSiC technology, which leverages the benefits of SiC materials, including higher thermal conductivity and better performance at elevated temperatures compared to traditional silicon MOSFETs. This makes it ideal for applications requiring high efficiency and reliability.
With its robust construction and advanced features, the IPA60R160P6 enables designers to create more compact, efficient, and reliable systems, significantly enhancing overall performance in applications ranging from automotive to industrial automation.
The IPA60R160P6 is part of Infineon's CoolSiC technology, which leverages the benefits of SiC materials, including higher thermal conductivity and better performance at elevated temperatures compared to traditional silicon MOSFETs. This makes it ideal for applications requiring high efficiency and reliability.
With its robust construction and advanced features, the IPA60R160P6 enables designers to create more compact, efficient, and reliable systems, significantly enhancing overall performance in applications ranging from automotive to industrial automation.
Equivalent
The IPA60R160P6 is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon. Equivalent products include:
1. STGW30H120 (STMicroelectronics)
2. FGA60N120 (Fairchild/Siliconix)
3. MIG60N120 (Mitsubishi)
4. FGA60N65 (ON Semiconductor)
Ensure to check datasheets for specifications to confirm compatibility for your specific application.
1. STGW30H120 (STMicroelectronics)
2. FGA60N120 (Fairchild/Siliconix)
3. MIG60N120 (Mitsubishi)
4. FGA60N65 (ON Semiconductor)
Ensure to check datasheets for specifications to confirm compatibility for your specific application.
Features
The IPA60R160P6 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Handling: The continuous drain current (I_D) is rated at 60A, allowing it to handle significant load currents.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)), typically around 0.16 ohms, which enhances efficiency and reduces power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, enabling easier drive requirements.
5. Fast Switching: The device features fast switching times, beneficial for high-frequency applications.
6. Package Type: It is commonly available in a TO-247 package, facilitating effective heat dissipation.
These features make the IPA60R160P6 ideal for applications in power supplies, motor drives, and various industrial electronics where efficiency and reliability are critical.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Handling: The continuous drain current (I_D) is rated at 60A, allowing it to handle significant load currents.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)), typically around 0.16 ohms, which enhances efficiency and reduces power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, enabling easier drive requirements.
5. Fast Switching: The device features fast switching times, beneficial for high-frequency applications.
6. Package Type: It is commonly available in a TO-247 package, facilitating effective heat dissipation.
These features make the IPA60R160P6 ideal for applications in power supplies, motor drives, and various industrial electronics where efficiency and reliability are critical.
Pinout
The IPA60R160P6 is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET switch, allowing it to turn on or off based on the voltage applied.
2. Drain (D): The terminal through which the current exits the MOSFET; it connects to the load.
3. Source (S): The terminal through which the current enters the MOSFET; it is typically connected to ground or a lower voltage.
This device is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 160A under specific conditions. It's commonly used in power electronics, including switch-mode power supplies and motor drives.
1. Gate (G): Controls the MOSFET switch, allowing it to turn on or off based on the voltage applied.
2. Drain (D): The terminal through which the current exits the MOSFET; it connects to the load.
3. Source (S): The terminal through which the current enters the MOSFET; it is typically connected to ground or a lower voltage.
This device is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 160A under specific conditions. It's commonly used in power electronics, including switch-mode power supplies and motor drives.
Manufacturer
The IPA60R160P6 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in a wide range of semiconductor solutions, including power semiconductors, automotive, industrial, and security technologies. The company is known for producing high-performance products that cater to various sectors, such as automotive electronics, renewable energy, and industrial applications. Infineon is a key player in the global semiconductor market, focusing on innovation and sustainability in its offerings. The IPA60R160P6 itself is a silicon carbide MOSFET, designed for high-efficiency power applications, which reflects Infineon's commitment to developing advanced and efficient technologies.
Application
The IPA60R160P6 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in power electronics applications. Its main areas include:
1. Inverters: Utilized in renewable energy systems such as solar and wind power for converting DC to AC.
2. Motor Drives: Employed in industrial motor control applications, enhancing efficiency and performance.
3. Power Supply Units: Used in switch-mode power supplies (SMPS) for efficient power conversion.
4. Uninterruptible Power Supplies (UPS): Provides reliable backup power systems.
5. High-Power Converter Applications: Suitable for electric vehicles and traction systems.
Overall, it excels in applications requiring high efficiency and high voltage handling.
1. Inverters: Utilized in renewable energy systems such as solar and wind power for converting DC to AC.
2. Motor Drives: Employed in industrial motor control applications, enhancing efficiency and performance.
3. Power Supply Units: Used in switch-mode power supplies (SMPS) for efficient power conversion.
4. Uninterruptible Power Supplies (UPS): Provides reliable backup power systems.
5. High-Power Converter Applications: Suitable for electric vehicles and traction systems.
Overall, it excels in applications requiring high efficiency and high voltage handling.
Package
The IPA60R160P6 is packaged in a TO-247 format. This package type is designed for high-power applications, featuring a robust structure that supports effective heat dissipation and is suitable for mounting on heatsinks.
