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IPB014N06NATMA1
+StücklisteMOSFET N-CH 60V 34A/180A TO263-7
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HerstellerInfineon-Technologien
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Herstellerteil #IPB014N06NATMA1
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Auf Lager2386
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Spezifikationen
| Attribut | Wert |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Ta), 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 143µA |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 30 V |
| Power Dissipation (Max) | 3W (Ta), 214W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Base Product Number | IPB014 |
Übersicht
Description
IPB014N06NATMA1 is a specific model of an Intelligent Power Module (IPM) utilized in various industrial applications, particularly in motor control and power conversion. This module integrates multiple functions, including power switching, drive circuitry, and thermal management, into a single package, which enhances efficiency and reduces the overall size of electronic systems.
The "N" in the designation often indicates the use of a particular semiconductor technology, such as silicon carbide (SiC) or insulated gate bipolar transistors (IGBTs), which provide high efficiency and performance. The "06" typically refers to the rated voltage or current capacity, while "NAT" and "MA" may denote specific features or packaging types relevant to the application.
IPMs like the IPB014N06NATMA1 are crucial in applications such as renewable energy systems, electric vehicles, and industrial automation, where reliable power management and efficient energy conversion are essential.
The "N" in the designation often indicates the use of a particular semiconductor technology, such as silicon carbide (SiC) or insulated gate bipolar transistors (IGBTs), which provide high efficiency and performance. The "06" typically refers to the rated voltage or current capacity, while "NAT" and "MA" may denote specific features or packaging types relevant to the application.
IPMs like the IPB014N06NATMA1 are crucial in applications such as renewable energy systems, electric vehicles, and industrial automation, where reliable power management and efficient energy conversion are essential.
Equivalent
The IPB014N06NATMA1 is an N-channel MOSFET. Equivalent products include the IRF1404, STP14NM60, and FQP30N06L. Always verify specifications such as voltage, current rating, and RDS(on) to ensure compatibility for your specific application.
Features
The IPB014N06NATMA1 is a high-performance N-channel MOSFET designed for applications requiring efficient power management. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) of up to 14A, allowing it to support various load conditions.
3. On-Resistance: It offers a low on-resistance (R_DS(on)) of approximately 14 mΩ, reducing conduction losses and improving efficiency.
4. Fast Switching: Designed for high-speed switching applications, it enables rapid turn-on and turn-off, which is ideal for switching power supplies and motor drives.
5. Thermal Performance: Features excellent thermal stability with a high junction temperature rating, enhancing reliability in demanding environments.
6. Package Type: Typically available in a TO-220 or similar package for easy heat dissipation.
Overall, the IPB014N06NATMA1 is suitable for a range of applications, including power supplies, DC-DC converters, and automotive systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) of up to 14A, allowing it to support various load conditions.
3. On-Resistance: It offers a low on-resistance (R_DS(on)) of approximately 14 mΩ, reducing conduction losses and improving efficiency.
4. Fast Switching: Designed for high-speed switching applications, it enables rapid turn-on and turn-off, which is ideal for switching power supplies and motor drives.
5. Thermal Performance: Features excellent thermal stability with a high junction temperature rating, enhancing reliability in demanding environments.
6. Package Type: Typically available in a TO-220 or similar package for easy heat dissipation.
Overall, the IPB014N06NATMA1 is suitable for a range of applications, including power supplies, DC-DC converters, and automotive systems.
Pinout
The IPB014N06NATMA1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to ground or the lower potential in the circuit. It is the terminal through which the current exits the MOSFET.
The IPB014N06NATMA1 is designed for applications requiring low on-resistance and high-speed switching, making it suitable for power management and motor control applications.
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to ground or the lower potential in the circuit. It is the terminal through which the current exits the MOSFET.
The IPB014N06NATMA1 is designed for applications requiring low on-resistance and high-speed switching, making it suitable for power management and motor control applications.
Manufacturer
The IPB014N06NATMA1 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors for various applications such as automotive, industrial, and communication technologies. The company is known for its expertise in power management and efficiency, making it a key player in the development of energy-efficient technologies. Infineon serves various industries, including automotive electronics, renewable energy, and Internet of Things (IoT) applications, focusing on innovation and sustainability in its product offerings.
Application
The IPB014N06NATMA1 is an N-channel MOSFET used primarily in power management applications. Its key application areas include:
1. DC-DC Converters: Efficient voltage regulation in power supply circuits.
2. Motor Control: Switching for brushless DC motors and other motor drivers.
3. Power Switching: Used in high-efficiency power switches in various electronic devices.
4. Load Management: Control of load switching in power distribution systems.
5. Battery Management Systems: Enhancing efficiency in charging and discharging processes.
Its high current and voltage ratings make it suitable for automotive and industrial applications as well.
1. DC-DC Converters: Efficient voltage regulation in power supply circuits.
2. Motor Control: Switching for brushless DC motors and other motor drivers.
3. Power Switching: Used in high-efficiency power switches in various electronic devices.
4. Load Management: Control of load switching in power distribution systems.
5. Battery Management Systems: Enhancing efficiency in charging and discharging processes.
Its high current and voltage ratings make it suitable for automotive and industrial applications as well.
Package
The package type of the IPB014N06NATMA1 is a TO-220 package. This package is commonly used for power MOSFETs, providing good thermal performance and ease of mounting.
