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IPB017N10N5ATMA1
+StücklisteMOSFET N-CH 100V 180A TO263-7
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HerstellerInfineon-Technologien
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Herstellerteil #IPB017N10N5ATMA1
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Datenblatt IPB017N10N5ATMA1 DataSheet
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Paket TO-263-7
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Auf Lager5419
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 180A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 1.7mOhm @ 100A, 10V |
| Vgs(th)(Max) @ Id | 3.8V @ 279µA |
| Gate Charge(Qg)(Max) @ Vgs | 210 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 15600 pF @ 50 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
Übersicht
Description
Such components are crucial in applications ranging from power supply units to motor drives and other electronic devices requiring efficient power management and signal processing. The specific characteristics, such as low on-resistance, fast switching capabilities, and high efficiency, make it suitable for use in high-performance and energy-efficient applications. For detailed specifications, one should refer to the manufacturer's datasheet, which provides comprehensive technical details including electrical characteristics, thermal management data, and application guidelines.
Equivalent
1. IRLB3034PBF from Infineon (formerly International Rectifier)
2. NTMFS5C404NL from ON Semiconductor
3. FDP047N10 from ON Semiconductor
4. AON6514 from Alpha & Omega Semiconductor
Always verify key specifications such as RDS(on), VDS, ID, and package to ensure compatibility.
Features
1. N-Channel MOSFET: It is an N-channel MOSFET, which generally offers faster switching speeds and higher efficiency.
2. Voltage and Current Ratings: This component can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 120A.
3. Low On-Resistance: The MOSFET is characterized by a low on-resistance (R_DS(on)), typically around 1.7 milliohms, which helps reduce power losses and improve efficiency.
4. Package Type: It is available in a TO-220 package, which provides a balance of good thermal performance and ease of mounting.
5. Applications: Suitable for use in applications such as power supplies, motor controllers, and DC-DC converters due to its robust performance and efficiency.
6. Thermal Performance: The device is designed to handle high power with good thermal management, making it reliable for demanding applications.
These features make the IPB017N10N5ATMA1 a versatile choice for power management and control in various electronic systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET by applying a voltage to turn it on or off.
2. Drain (D): This is the main pin through which the current flows when the MOSFET is in the 'on' state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in most applications.
In this configuration, the MOSFET operates as a switch or amplifier in electronic devices. It is designed for high efficiency and low on-resistance, making it suitable for a variety of applications such as DC-DC converters, motor control, and power management in automotive and industrial settings.