IPB017N10N5ATMA1

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IPB017N10N5ATMA1

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MOSFET N-CH 100V 180A TO263-7

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Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 180A (Tc)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 1.7mOhm @ 100A, 10V
Vgs(th)(Max) @ Id 3.8V @ 279µA
Gate Charge(Qg)(Max) @ Vgs 210 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 15600 pF @ 50 V
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7

Übersicht

Description

The IPB017N10N5ATMA1 is likely a specific model of an electronic component, possibly a semiconductor such as a MOSFET or transistor, used in electronic circuits. Components like these are essential for managing electrical signals and power within various devices. The designation "IPB017N10N5" often indicates specific characteristics of the component, such as its current and voltage ratings, packaging type, and design specifications. "ATMA1" might refer to the component's packaging or a specific series within a manufacturer's product lineup.
Such components are crucial in applications ranging from power supply units to motor drives and other electronic devices requiring efficient power management and signal processing. The specific characteristics, such as low on-resistance, fast switching capabilities, and high efficiency, make it suitable for use in high-performance and energy-efficient applications. For detailed specifications, one should refer to the manufacturer's datasheet, which provides comprehensive technical details including electrical characteristics, thermal management data, and application guidelines.

Equivalent

The IPB017N10N5ATMA1 is a MOSFET from Infineon Technologies. Equivalent products generally include those with similar voltage, current ratings, and package types from other manufacturers. Some equivalent MOSFETs might be:
1. IRLB3034PBF from Infineon (formerly International Rectifier)
2. NTMFS5C404NL from ON Semiconductor
3. FDP047N10 from ON Semiconductor
4. AON6514 from Alpha & Omega Semiconductor
Always verify key specifications such as RDS(on), VDS, ID, and package to ensure compatibility.

Features

The IPB017N10N5ATMA1 is a power MOSFET designed for various electronic applications. Here are its key features:
1. N-Channel MOSFET: It is an N-channel MOSFET, which generally offers faster switching speeds and higher efficiency.

2. Voltage and Current Ratings: This component can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 120A.
3. Low On-Resistance: The MOSFET is characterized by a low on-resistance (R_DS(on)), typically around 1.7 milliohms, which helps reduce power losses and improve efficiency.
4. Package Type: It is available in a TO-220 package, which provides a balance of good thermal performance and ease of mounting.
5. Applications: Suitable for use in applications such as power supplies, motor controllers, and DC-DC converters due to its robust performance and efficiency.
6. Thermal Performance: The device is designed to handle high power with good thermal management, making it reliable for demanding applications.
These features make the IPB017N10N5ATMA1 a versatile choice for power management and control in various electronic systems.

Pinout

The IPB017N10N5ATMA1 is a power MOSFET manufactured by Infineon Technologies. It features a TO-263 (D2PAK) package, which typically has three pins:
1. Gate (G): This pin is used to control the MOSFET by applying a voltage to turn it on or off.
2. Drain (D): This is the main pin through which the current flows when the MOSFET is in the 'on' state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in most applications.
In this configuration, the MOSFET operates as a switch or amplifier in electronic devices. It is designed for high efficiency and low on-resistance, making it suitable for a variety of applications such as DC-DC converters, motor control, and power management in automotive and industrial settings.

Manufacturer

The IPB017N10N5ATMA1 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components, including power semiconductors, microcontrollers, security controllers, and sensors. The company is known for its innovations in automotive, industrial power control, power management, and digital security solutions. Infineon plays a significant role in advancing technology in areas such as electric vehicles, renewable energy, and IoT applications.

Application

The IPB017N10N5ATMA1 is a N-channel MOSFET used in various applications due to its efficiency and reliability. It is commonly employed in power management systems, including DC-DC converters and power supplies, due to its low on-resistance and high-speed switching capabilities. Additionally, it finds use in automotive electronics for applications like motor drives and electronic control units (ECUs). The MOSFET is also utilized in industrial equipment and consumer electronics, where efficient power handling and thermal performance are critical. Its robust design makes it suitable for environments requiring high power density and efficiency.

Package

The IPB017N10N5ATMA1 is packaged in a TO-263 (also known as D2PAK) type. This is a surface-mount package commonly used for power transistors like MOSFETs, providing efficient thermal performance and ease of installation on PCBs.

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