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IPB180N06S4-H1
+StücklisteMOSFETs N-Ch 60V 180A D2PAK-6 OptiMOS-T2
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HerstellerInfineon-Technologien
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Herstellerteil #IPB180N06S4-H1
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Datenblatt IPB180N06S4-H1 DataSheet
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Auf Lager24402
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | MouseReel |
| StandardPackQty | 1000 |
Übersicht
Description
The IPB180N06S4-H1 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It is part of the OptiMOS™ series produced by Infineon Technologies, known for their low on-state resistance and high-speed switching capabilities. This specific model features a voltage rating of 60V and a continuous current rating of 180A, making it suitable for demanding applications such as DC-DC converters, motor drives, and synchronous rectification in power supplies.
Key attributes include its low gate charge and optimized internal capacitances, which enhance its efficiency and thermal performance. The device is typically housed in a TO-220 package, offering ease of mounting and effective heat dissipation. It is designed to operate in a range of temperatures and is compliant with RoHS standards, ensuring it is environmentally friendly. This MOSFET is particularly favored in applications requiring minimal power loss and high power density, contributing to the overall efficiency and reliability of electronic systems.
Key attributes include its low gate charge and optimized internal capacitances, which enhance its efficiency and thermal performance. The device is typically housed in a TO-220 package, offering ease of mounting and effective heat dissipation. It is designed to operate in a range of temperatures and is compliant with RoHS standards, ensuring it is environmentally friendly. This MOSFET is particularly favored in applications requiring minimal power loss and high power density, contributing to the overall efficiency and reliability of electronic systems.
Equivalent
The IPB180N06S4-H1 is a power MOSFET from Infineon, commonly used for switching applications. Equivalent products can be found from various manufacturers, such as:
1. IRF3205 from Vishay
2. FQP30N06L from ON Semiconductor
3. STP60NF06 from STMicroelectronics
These alternatives have comparable voltage and current ratings, making them suitable substitutes. Always check the datasheets for specific characteristics to ensure compatibility with your application.
1. IRF3205 from Vishay
2. FQP30N06L from ON Semiconductor
3. STP60NF06 from STMicroelectronics
These alternatives have comparable voltage and current ratings, making them suitable substitutes. Always check the datasheets for specific characteristics to ensure compatibility with your application.
Features
The IPB180N06S4-H1 is a power MOSFET designed for various applications requiring efficient power management. Key features include:
1. N-Channel MOSFET: It uses an N-channel design, offering efficient current conduction.
2. Voltage and Current Ratings: It is rated for a maximum voltage of 60V and a continuous drain current of 180A.
3. Low On-Resistance: The device boasts a low on-resistance of around 2.5mΩ, which minimizes power loss and enhances efficiency.
4. High-Speed Switching: This MOSFET is designed for high-speed switching applications, making it suitable for use in power converters and inverters.
5. Thermal Performance: The package offers good thermal conductivity for effective heat dissipation, often coming in a TO-220 package.
6. Robust Construction: It offers ruggedness and reliability, suitable for automotive and industrial applications.
7. Enhanced Safe Operating Area (SOA): Ensures reliability under various operating conditions.
These features make the IPB180N06S4-H1 ideal for use in power management circuits, motor drives, and other high-current applications.
1. N-Channel MOSFET: It uses an N-channel design, offering efficient current conduction.
2. Voltage and Current Ratings: It is rated for a maximum voltage of 60V and a continuous drain current of 180A.
3. Low On-Resistance: The device boasts a low on-resistance of around 2.5mΩ, which minimizes power loss and enhances efficiency.
4. High-Speed Switching: This MOSFET is designed for high-speed switching applications, making it suitable for use in power converters and inverters.
5. Thermal Performance: The package offers good thermal conductivity for effective heat dissipation, often coming in a TO-220 package.
6. Robust Construction: It offers ruggedness and reliability, suitable for automotive and industrial applications.
7. Enhanced Safe Operating Area (SOA): Ensures reliability under various operating conditions.
These features make the IPB180N06S4-H1 ideal for use in power management circuits, motor drives, and other high-current applications.
Pinout
The IPB180N06S4-H1 is a power MOSFET manufactured by Infineon Technologies. It is a part of the OptiMOS™ series and typically used in various power management applications due to its efficiency and performance characteristics.
Key specifications include:
- Pin Count: The IPB180N06S4-H1 is housed in a TO-220 package, which includes three leads or pins.
- Pin Functions:
1. Gate (G): This pin is used to control the opening and closing of the MOSFET. By applying voltage to the gate, the device is turned on or off.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the 'on' state.
3. Source (S): The source is the terminal where the current enters the MOSFET.
This MOSFET is mainly used for switching and amplification in electronic applications, benefiting from low on-state resistance and high-speed switching capabilities.
Key specifications include:
- Pin Count: The IPB180N06S4-H1 is housed in a TO-220 package, which includes three leads or pins.
- Pin Functions:
1. Gate (G): This pin is used to control the opening and closing of the MOSFET. By applying voltage to the gate, the device is turned on or off.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the 'on' state.
3. Source (S): The source is the terminal where the current enters the MOSFET.
This MOSFET is mainly used for switching and amplification in electronic applications, benefiting from low on-state resistance and high-speed switching capabilities.
Manufacturer
The IPB180N06S4-H1 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer founded in 1999. It specializes in designing and producing a broad range of semiconductor solutions including microcontrollers, sensors, and power semiconductors for automotive, industrial, and consumer electronics applications. The company is known for its innovations in energy efficiency, mobility, and security technologies.
Application
The IPB180N06S4-H1 is a power MOSFET designed for various applications due to its high efficiency and low on-resistance. It is commonly used in:
1. Automotive Systems: Ideal for powertrain systems, electric pumps, fans, and body electronics due to its robust performance.
2. Power Supplies: Suitable for DC-DC converters and switching power supplies, providing efficient energy conversion.
3. Motor Control: Used in motor drives and controllers, offering reliable and efficient power management for motors.
4. Industrial Applications: Employed in industrial automation and control systems for efficient power handling.
5. Renewable Energy Systems: Utilized in solar inverters and other renewable energy solutions for effective energy management.
These applications leverage the MOSFET's ability to handle high currents and voltages with minimal losses.
1. Automotive Systems: Ideal for powertrain systems, electric pumps, fans, and body electronics due to its robust performance.
2. Power Supplies: Suitable for DC-DC converters and switching power supplies, providing efficient energy conversion.
3. Motor Control: Used in motor drives and controllers, offering reliable and efficient power management for motors.
4. Industrial Applications: Employed in industrial automation and control systems for efficient power handling.
5. Renewable Energy Systems: Utilized in solar inverters and other renewable energy solutions for effective energy management.
These applications leverage the MOSFET's ability to handle high currents and voltages with minimal losses.
Package
The IPB180N06S4-H1 is a power MOSFET, and it typically comes in a TO-220 package type.
