IPD068N10N3G

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IPD068N10N3G

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MOSFET N-CH 100V 90A DPAK

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Übersicht

Description

The IPD068N10N3G is a specific type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficiency and reliability in electronic applications. Manufactured by Infineon Technologies, this N-channel MOSFET is designed for use in various power management applications. It features a low on-resistance, which minimizes power loss and increases efficiency in switching operations. The IPD068N10N3G is often utilized in automotive, industrial, and consumer electronics where efficient power handling and thermal performance are critical.
Key specifications include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) capability under specified conditions. It is typically packaged in a TO-252, also known as DPAK, which aids in heat dissipation and compactness. The MOSFET is suitable for high-frequency applications due to its fast switching capabilities. Its robustness and reliability make it a popular choice among engineers designing circuits that require durable and efficient power transistors.

Equivalent

Equivalent products to the IPD068N10N3G, which is an N-channel MOSFET, include models like the IRL540N, IRF540N, or FDP3651U. These alternatives typically have similar voltage and current ratings and are used in applications requiring efficient power management and switching. When choosing an equivalent, always verify the specifications like RDS(on), VDS, ID, and package type to ensure compatibility with your specific requirements. Always consult the datasheets from the manufacturers for detailed comparisons.

Features

The IPD068N10N3G is a power MOSFET that is designed for a variety of applications, primarily in power management fields. Here are some key features:
1. N-channel MOSFET: Ideal for high-side and low-side switching applications.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of approximately 68A.
3. Low On-Resistance: Features low R_DS(on) which minimizes power loss and enhances efficiency.
4. Fast Switching: Capable of rapid switching, which is beneficial for high-frequency applications.
5. Thermal Management: Designed with good thermal characteristics to handle high power dissipation.
6. Package Type: Often available in D^2PAK or TO-220 package, which facilitates easy mounting and heat dissipation.
7. Applications: Commonly used in DC-DC converters, motor control, and other power management systems.
These features make the IPD068N10N3G suitable for optimizing performance in various electronic designs where efficient power control is critical.

Pinout

The IPD068N10N3G is a power MOSFET produced by Infineon Technologies. It typically comes in a TO-252 (DPAK) package. This package usually has three pins:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here determines whether the MOSFET is in the on or off state.
2. Drain (D): This is the pin where the main current flows into the MOSFET when it is in the on state.
3. Source (S): This pin is the return path for the current flowing through the MOSFET. It is typically connected to the ground in many applications.
The IPD068N10N3G is designed for use in power applications, providing low on-resistance and high switching speed, making it ideal for applications such as DC-DC converters and load switching. Always refer to the manufacturer's datasheet for precise specifications and pin configuration details.

Manufacturer

The IPD068N10N3G is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that designs, develops, and produces a wide range of semiconductor solutions. The company is known for its diverse portfolio, which includes products for automotive, industrial power control, power management, and digital security markets. Infineon specializes in creating technologies that enable efficient energy management, mobility, and security, and it plays a significant role in the global electronics industry.

Application

The IPD068N10N3G is a power MOSFET that is typically used in applications requiring efficient power management. Common application areas include:
1. Switching Power Supplies: Utilized for efficient energy conversion in power supply circuits.
2. Motor Control: Suitable for DC motor drives due to its fast switching characteristics.
3. Load Switches: Acts as an electronic switch in various load management applications.
4. DC-DC Converters: Enhances the efficiency of voltage regulation circuits in both commercial and industrial applications.
5. Automotive: Employed in automotive systems for battery management and control modules.
6. LED Lighting: Used in LED driver circuits for efficient power regulation.
Its design focuses on minimizing power loss and improving thermal performance.

Package

The IPD068N10N3G is packaged in a TO-252, also known as DPAK. This is a surface-mount package used for transistors and similar semiconductor devices, providing efficient thermal performance and compact size suitable for various electronic applications.

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