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IPD100N06S4-03
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HerstellerInfineon-Technologien
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Herstellerteil #IPD100N06S4-03
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Datenblatt IPD100N06S4-03 DataSheet
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Auf Lager7703
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Spezifikationen
| Attribut | Wert |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 2500 |
| Technology | Si |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Mounting Type | SMD/SMT |
| Package / Case | DPAK-3 (TO-252-3) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 100 A |
| Rds On | 2.8 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 128 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 150 W |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Configuration | Single |
| Fall Time | 5 ns |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Rise Time | 70 ns |
| Series | OptiMOS-T2 |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 40 ns |
| Typical Turn - On Delay Time | 30 ns |
| Width | 6.22 mm |
| Part # Aliases | IPD1N6S43XT SP000415576 IPD100N06S403ATMA1 |
| Unit Weight | 0.011640 oz |
Übersicht
Description
With a fast switching speed, the IPD100N06S4-03 is ideal for applications requiring rapid switching, reducing the overall heat generated during operation. It comes in a DPAK package, which facilitates effective heat dissipation and simplifies PCB layout. The MOSFET is also designed to be robust, with built-in ESD protection, ensuring reliability in various operating conditions. Overall, the IPD100N06S4-03 is a versatile component suitable for engineers looking to optimize power efficiency in their designs.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for a variety of applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 100A, providing robust performance.
3. RDS(on): It features a low on-resistance (RDS(on)) of around 3.4 mΩ, which minimizes power loss during operation.
4. Package: Available in a TO-220 package, it offers good thermal performance for heat dissipation.
5. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically between 1-2V, allowing for easier control in low-voltage applications.
6. Fast Switching: It supports fast switching speeds, making it suitable for PWM applications and efficient power conversion.
These features make the IPD100N06S4-03 suitable for applications in motor control, power supplies, and industrial automation.
Pinout
1. Gate (G) - Controls the MOSFET's operation (turns it on/off).
2. Drain (D) - The terminal where the current flows out of the MOSFET.
3. Source (S) - The terminal where the current flows into the MOSFET.
The specific pinout may vary slightly depending on the package type (e.g., TO-220, SO-8), so it's essential to refer to the datasheet for the exact pin assignments and to ensure proper implementation in circuit designs. The device is known for its low on-resistance and high-speed switching capabilities, making it suitable for high-efficiency applications.
Manufacturer
Application
1. Power Supplies: Used in DC-DC converters and switching power supplies for efficient voltage regulation.
2. Motor Control: Drives for DC motors and brushless motors in automotive and industrial applications.
3. Class D Audio Amplifiers: Enhances audio amplification systems with improved efficiency.
4. LED Lighting: Controls LED drivers for efficient lighting solutions.
5. Battery Management Systems: Manages charging and discharging cycles in battery packs.
6. Telecommunications: Used in RF amplifiers and signal processing equipment.
Its low on-resistance and high-speed switching capabilities make it ideal for these applications.